JPS57170535A - Etching method for thin silicon film - Google Patents
Etching method for thin silicon filmInfo
- Publication number
- JPS57170535A JPS57170535A JP5565081A JP5565081A JPS57170535A JP S57170535 A JPS57170535 A JP S57170535A JP 5565081 A JP5565081 A JP 5565081A JP 5565081 A JP5565081 A JP 5565081A JP S57170535 A JPS57170535 A JP S57170535A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxygen
- carbon tetrafluoride
- substrate
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5565081A JPS57170535A (en) | 1981-04-15 | 1981-04-15 | Etching method for thin silicon film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5565081A JPS57170535A (en) | 1981-04-15 | 1981-04-15 | Etching method for thin silicon film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57170535A true JPS57170535A (en) | 1982-10-20 |
Family
ID=13004698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5565081A Pending JPS57170535A (en) | 1981-04-15 | 1981-04-15 | Etching method for thin silicon film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57170535A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01100924A (ja) * | 1987-10-14 | 1989-04-19 | Seiko Epson Corp | アクティプマトリクス基板の製造方法 |
US6376383B2 (en) | 1998-01-16 | 2002-04-23 | Nec Corporation | Method for etching silicon layer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5240978A (en) * | 1975-09-27 | 1977-03-30 | Fujitsu Ltd | Process for production of semiconductor device |
JPS535974A (en) * | 1976-07-02 | 1978-01-19 | Philips Nv | Method of manufacturing appartus and apparatus manufactured by method thereof |
-
1981
- 1981-04-15 JP JP5565081A patent/JPS57170535A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5240978A (en) * | 1975-09-27 | 1977-03-30 | Fujitsu Ltd | Process for production of semiconductor device |
JPS535974A (en) * | 1976-07-02 | 1978-01-19 | Philips Nv | Method of manufacturing appartus and apparatus manufactured by method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01100924A (ja) * | 1987-10-14 | 1989-04-19 | Seiko Epson Corp | アクティプマトリクス基板の製造方法 |
US6376383B2 (en) | 1998-01-16 | 2002-04-23 | Nec Corporation | Method for etching silicon layer |
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