JPS6466938A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6466938A
JPS6466938A JP22360387A JP22360387A JPS6466938A JP S6466938 A JPS6466938 A JP S6466938A JP 22360387 A JP22360387 A JP 22360387A JP 22360387 A JP22360387 A JP 22360387A JP S6466938 A JPS6466938 A JP S6466938A
Authority
JP
Japan
Prior art keywords
plasma
substrate
trench
gas
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22360387A
Other languages
Japanese (ja)
Inventor
Koichi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22360387A priority Critical patent/JPS6466938A/en
Publication of JPS6466938A publication Critical patent/JPS6466938A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To form a trench having a high etching rate and an excellent anti-SiO2 selection ratio, and to decrease mandays on manufacture largely by plasma- etching an silicon substrate to be treated while the upper section of the substrate is supplied with the mixed gas of fluorine radicals liberated by plasma discharge, a gas as residues and oxygen. CONSTITUTION:SiO2 is used as a mask material, and applied onto an Si substrate. The substrate is set to a plasma etching device under the state in which a window is bored to a trench forming section, the mixed gas of SF6 gas and O2 is fed, and the inside of the plasma etching device is evacuated. Power is applied under the state and the trench forming section is plasma etched, thus shaping a trench having excellent positional accuracy and form.
JP22360387A 1987-09-07 1987-09-07 Manufacture of semiconductor device Pending JPS6466938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22360387A JPS6466938A (en) 1987-09-07 1987-09-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22360387A JPS6466938A (en) 1987-09-07 1987-09-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6466938A true JPS6466938A (en) 1989-03-13

Family

ID=16800772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22360387A Pending JPS6466938A (en) 1987-09-07 1987-09-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6466938A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290930A (en) * 1990-03-09 1991-12-20 Fuji Electric Co Ltd Method for processing
JPH0418726A (en) * 1990-05-11 1992-01-22 Fuji Electric Co Ltd Dry etching process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290930A (en) * 1990-03-09 1991-12-20 Fuji Electric Co Ltd Method for processing
JPH0418726A (en) * 1990-05-11 1992-01-22 Fuji Electric Co Ltd Dry etching process

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