JPS6466938A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6466938A JPS6466938A JP22360387A JP22360387A JPS6466938A JP S6466938 A JPS6466938 A JP S6466938A JP 22360387 A JP22360387 A JP 22360387A JP 22360387 A JP22360387 A JP 22360387A JP S6466938 A JPS6466938 A JP S6466938A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- trench
- gas
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a trench having a high etching rate and an excellent anti-SiO2 selection ratio, and to decrease mandays on manufacture largely by plasma- etching an silicon substrate to be treated while the upper section of the substrate is supplied with the mixed gas of fluorine radicals liberated by plasma discharge, a gas as residues and oxygen. CONSTITUTION:SiO2 is used as a mask material, and applied onto an Si substrate. The substrate is set to a plasma etching device under the state in which a window is bored to a trench forming section, the mixed gas of SF6 gas and O2 is fed, and the inside of the plasma etching device is evacuated. Power is applied under the state and the trench forming section is plasma etched, thus shaping a trench having excellent positional accuracy and form.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22360387A JPS6466938A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22360387A JPS6466938A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6466938A true JPS6466938A (en) | 1989-03-13 |
Family
ID=16800772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22360387A Pending JPS6466938A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6466938A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03290930A (en) * | 1990-03-09 | 1991-12-20 | Fuji Electric Co Ltd | Method for processing |
JPH0418726A (en) * | 1990-05-11 | 1992-01-22 | Fuji Electric Co Ltd | Dry etching process |
-
1987
- 1987-09-07 JP JP22360387A patent/JPS6466938A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03290930A (en) * | 1990-03-09 | 1991-12-20 | Fuji Electric Co Ltd | Method for processing |
JPH0418726A (en) * | 1990-05-11 | 1992-01-22 | Fuji Electric Co Ltd | Dry etching process |
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