JPS57169256A - Measuring method for characteristic of semiconductor device - Google Patents
Measuring method for characteristic of semiconductor deviceInfo
- Publication number
- JPS57169256A JPS57169256A JP5478881A JP5478881A JPS57169256A JP S57169256 A JPS57169256 A JP S57169256A JP 5478881 A JP5478881 A JP 5478881A JP 5478881 A JP5478881 A JP 5478881A JP S57169256 A JPS57169256 A JP S57169256A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- oxide film
- currents
- measurement
- heating oven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To minimize errors in measurement by breaking the natural oxide film of the surface of a wafer by flowing high currents at first and measuring the characteristics by flowing predetermined currents when measuring the characteristics of an element formed onto the wafer through a diffusion process. CONSTITUTION:An impurity is diffused onto the semiconductor wafer 1, and an element region 5 forming an element such as a Zener diode 6 is formed. After the diffusion process, the wafer 1 is extracted from a heating oven, and pulse currents in approximately 20mA are flowed. Currents in approximately 50muA are flowed and voltage is measured, and the wafer is entered into the heating oven again and forced diffusion is conducted when the voltage is less than prescribed voltage. When the wafer 1 is extracted from the heating oven, it touches with the atmospheric air, the thin natural oxide film is shaped onto the wafer 1 and contact resistance due to the oxide film generates errors in measurement, but such errors in measurement are eliminated when the natural oxide film is broken by flowing pulse currents at first.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5478881A JPS57169256A (en) | 1981-04-11 | 1981-04-11 | Measuring method for characteristic of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5478881A JPS57169256A (en) | 1981-04-11 | 1981-04-11 | Measuring method for characteristic of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57169256A true JPS57169256A (en) | 1982-10-18 |
Family
ID=12980490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5478881A Pending JPS57169256A (en) | 1981-04-11 | 1981-04-11 | Measuring method for characteristic of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57169256A (en) |
-
1981
- 1981-04-11 JP JP5478881A patent/JPS57169256A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57169256A (en) | Measuring method for characteristic of semiconductor device | |
| JPS57113241A (en) | Semiconductor device | |
| JPS5582458A (en) | Preparation of semiconductor device | |
| JPS56107562A (en) | Manufacture of semiconductor device | |
| JPS5571034A (en) | Measuring method for resistance distribution of compound semiconductor single crystal | |
| JPS5750461A (en) | Semiconductor device | |
| JPS5473097A (en) | Gas sensor | |
| JPS5596669A (en) | Semiconductor device and method of fabricating the same | |
| JPS57106065A (en) | Semiconductor device | |
| JPS56134763A (en) | Bipolar integrated circuit | |
| JPS56115539A (en) | Method of measuring etching depth of semiconductor | |
| JPS56105648A (en) | Semiconductor device | |
| JPS5632772A (en) | Semiconductor pressure sensor | |
| JPS55143077A (en) | Manufacturing method of semiconductor distortion detecting element for displacement transducer | |
| JPS5649950A (en) | Gas-detecting element and gas-detecting device | |
| JPS5595335A (en) | Preparation of semiconductor device | |
| JPS5453874A (en) | Production of semiconductor device | |
| JPS57117234A (en) | Manufacture of semiconductor device | |
| JPS5367351A (en) | Measuring method of resistivity and intrinsic contact resistance | |
| JPS57159014A (en) | Measuring method for characteristics of epitaxial semiconductor wafer | |
| JPS5346292A (en) | Production of semiconductor device | |
| JPS5796567A (en) | Manufacture of semiconductor device | |
| JPS5363982A (en) | Production of silicon gate type mis semiconductor | |
| JPS5776873A (en) | Manufacture of semiconductor device | |
| JPS5688372A (en) | Manufacture of semiconductor diaphragm |