JPS57167680A - Manufacture of complementary mis field-effect transistor - Google Patents

Manufacture of complementary mis field-effect transistor

Info

Publication number
JPS57167680A
JPS57167680A JP56053408A JP5340881A JPS57167680A JP S57167680 A JPS57167680 A JP S57167680A JP 56053408 A JP56053408 A JP 56053408A JP 5340881 A JP5340881 A JP 5340881A JP S57167680 A JPS57167680 A JP S57167680A
Authority
JP
Japan
Prior art keywords
drain
source
channel
manufacture
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56053408A
Other languages
Japanese (ja)
Inventor
Kaoru Inoue
Koichi Kugimiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56053408A priority Critical patent/JPS57167680A/en
Publication of JPS57167680A publication Critical patent/JPS57167680A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Abstract

PURPOSE:To reduce the gate length without deterioration of characteristics for the subject transistor by a method wherein the source and drain of an N-channel are formed prior to perform the source and drain forming process for a P- channel, and the source and drain of the P-channel is formed at the temperature lower than that of the N-channel. CONSTITUTION:The process, wherein the source and drain for the N-channel region 21 is formed, is performed earlier than the forming process of the source and drain for the P-channel region 22, and also the source and drain for the P- channel region 22 are formed at the temperature lower than that at which the source and drain for the N-channel are formed. According to this constitution, arsenic having the diffusion coefficient smaller than that of boron is chiefly used as impurities for the formation of the source and drain on the N-channel side. By performing the formation of the source and drain on the N-channel side earlier than that of the source and drain on the P-channel side, the temperature of the heat treatment on the P-channel side can be reduced, although a manufacturing process is increased.
JP56053408A 1981-04-08 1981-04-08 Manufacture of complementary mis field-effect transistor Pending JPS57167680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56053408A JPS57167680A (en) 1981-04-08 1981-04-08 Manufacture of complementary mis field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56053408A JPS57167680A (en) 1981-04-08 1981-04-08 Manufacture of complementary mis field-effect transistor

Publications (1)

Publication Number Publication Date
JPS57167680A true JPS57167680A (en) 1982-10-15

Family

ID=12941991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56053408A Pending JPS57167680A (en) 1981-04-08 1981-04-08 Manufacture of complementary mis field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57167680A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05248055A (en) * 1991-10-26 1993-09-24 Daiken Trade & Ind Co Ltd Decoration plate for construction and execution of work thereof
JPH07122649A (en) * 1993-10-26 1995-05-12 Matsushita Electric Ind Co Ltd Fabrication of cmos transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799768A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of complementary type metal oxide semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799768A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of complementary type metal oxide semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05248055A (en) * 1991-10-26 1993-09-24 Daiken Trade & Ind Co Ltd Decoration plate for construction and execution of work thereof
JPH07122649A (en) * 1993-10-26 1995-05-12 Matsushita Electric Ind Co Ltd Fabrication of cmos transistor

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