JPS57167638A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57167638A
JPS57167638A JP3502581A JP3502581A JPS57167638A JP S57167638 A JPS57167638 A JP S57167638A JP 3502581 A JP3502581 A JP 3502581A JP 3502581 A JP3502581 A JP 3502581A JP S57167638 A JPS57167638 A JP S57167638A
Authority
JP
Japan
Prior art keywords
temperature
treatment
rate
drop
rise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3502581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211782B2 (enrdf_load_stackoverflow
Inventor
Kazunori Imaoka
Hideaki Ozawa
Takao Hiraguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3502581A priority Critical patent/JPS57167638A/ja
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167638A publication Critical patent/JPS57167638A/ja
Publication of JPS6211782B2 publication Critical patent/JPS6211782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3502581A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167638A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3502581A JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3502581A JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167638A true JPS57167638A (en) 1982-10-15
JPS6211782B2 JPS6211782B2 (enrdf_load_stackoverflow) 1987-03-14

Family

ID=12430513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3502581A Granted JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167638A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821829A (ja) * 1981-07-31 1983-02-08 Fujitsu Ltd 半導体装置の製造方法
JPS6444023A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Heat treatment
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821829A (ja) * 1981-07-31 1983-02-08 Fujitsu Ltd 半導体装置の製造方法
JPS6444023A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Heat treatment
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6211782B2 (enrdf_load_stackoverflow) 1987-03-14

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