JPS57166035A - Forming method for mask for dry etching - Google Patents
Forming method for mask for dry etchingInfo
- Publication number
- JPS57166035A JPS57166035A JP5025581A JP5025581A JPS57166035A JP S57166035 A JPS57166035 A JP S57166035A JP 5025581 A JP5025581 A JP 5025581A JP 5025581 A JP5025581 A JP 5025581A JP S57166035 A JPS57166035 A JP S57166035A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- section
- resist
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 239000011147 inorganic material Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the mask for dry etching with an inverted trapezoidal cross-section by forming a resist mask onto a conductive thin-film on a substrate made of a nonmetallic inorganic material, which mainly consists of an oxide, such as glass, patterning the thin-film, plating a metallic film with the same thickness as a resist and removing the resist. CONSTITUTION:The resist mask 5 is formed onto the conductive thin-film 4 of the substrate 1 of glass, etc. The section of the mask 5 takes an inclined plane, but the section and the shape of the plane are extremely sharp. When Ni6 is chemically plated in the same thickness as the mask 5, a sharp inverted trapezoid is obtained. When the mask 5 is removed and the surface is dry-etched, the substrate 1 is removed through etching in succession to the conductive film 4. Unlike evaporation deposition, the Ni film through chemical plating is minute, is excellent in durability physically and chemically and hardly degrade afterwards as a mask even when the impact of sputtering is applied when dry etching. According to this constitution, the mask is thick but is extremely sharp, and the section is vertical even when the heavy etching of the processing of 50-100mu depth is executed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5025581A JPS57166035A (en) | 1981-04-03 | 1981-04-03 | Forming method for mask for dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5025581A JPS57166035A (en) | 1981-04-03 | 1981-04-03 | Forming method for mask for dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57166035A true JPS57166035A (en) | 1982-10-13 |
Family
ID=12853865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5025581A Pending JPS57166035A (en) | 1981-04-03 | 1981-04-03 | Forming method for mask for dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57166035A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0272624A (en) * | 1988-09-08 | 1990-03-12 | Toshiba Corp | Pattern formation method |
| JP2015213208A (en) * | 2014-05-01 | 2015-11-26 | セイコーエプソン株式会社 | Manufacturing method of functional device |
-
1981
- 1981-04-03 JP JP5025581A patent/JPS57166035A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0272624A (en) * | 1988-09-08 | 1990-03-12 | Toshiba Corp | Pattern formation method |
| JP2015213208A (en) * | 2014-05-01 | 2015-11-26 | セイコーエプソン株式会社 | Manufacturing method of functional device |
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