JPS57162332A - Exposing method for electron beam - Google Patents

Exposing method for electron beam

Info

Publication number
JPS57162332A
JPS57162332A JP4637781A JP4637781A JPS57162332A JP S57162332 A JPS57162332 A JP S57162332A JP 4637781 A JP4637781 A JP 4637781A JP 4637781 A JP4637781 A JP 4637781A JP S57162332 A JPS57162332 A JP S57162332A
Authority
JP
Japan
Prior art keywords
exposed
pattern
exposure
electron beam
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4637781A
Other languages
Japanese (ja)
Inventor
Nobuyuki Yasutake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4637781A priority Critical patent/JPS57162332A/en
Publication of JPS57162332A publication Critical patent/JPS57162332A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To enable exposure of correct position of electron beam by correcting the new exposure position by considering the previous exposure area and the distance between the newly exposed position and the previously exposed area, thereby eliminating the influence of the charge of the exposed pattern. CONSTITUTION:In an exposure device having an electron gun, an electron lens system, a deflecting system 3, and a stage moving by the exposure region unit of an electron beam, the position of the pattern to be exposed next is corrected by considering the area of the pattern exposed so far and the distance between the pattern and the pattern to be exposed next. Thus, a correcting amount DELTAxp, DELTAyp are calculated in advance by a computer, the coordinates of the position (x+DELTAxp), (yp+DELTAyp) corrected by a buffer memory 11 are supplied to a positioning deflection control unit 12, thereby emitting the beam to the correct position.
JP4637781A 1981-03-31 1981-03-31 Exposing method for electron beam Pending JPS57162332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4637781A JPS57162332A (en) 1981-03-31 1981-03-31 Exposing method for electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4637781A JPS57162332A (en) 1981-03-31 1981-03-31 Exposing method for electron beam

Publications (1)

Publication Number Publication Date
JPS57162332A true JPS57162332A (en) 1982-10-06

Family

ID=12745449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4637781A Pending JPS57162332A (en) 1981-03-31 1981-03-31 Exposing method for electron beam

Country Status (1)

Country Link
JP (1) JPS57162332A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181616A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Electron beam exposure method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181616A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Electron beam exposure method

Similar Documents

Publication Publication Date Title
US4853870A (en) Electron beam exposure system
JPS5693318A (en) Electron beam exposure device
DE3851653D1 (en) Arrangement and method for positioning the image of the structure on a mask on a substrate.
JPS5632655A (en) Electron beam device
ES8405196A1 (en) Colour display tube.
JPS57162332A (en) Exposing method for electron beam
JPH0691005B2 (en) Charged beam drawing method
EP0443565B1 (en) Electron beam exposure apparatus
GB1381082A (en) Method and apparatus for selectively exposing a photosensitive surface
JPS5489579A (en) Electron ray exposure system
US3855023A (en) Manufacture of masks
TW364154B (en) Electron beam writing method and apparatus for carrying out the same
IT7925291A0 (en) APPARATUS AND METHOD FOR AUTOMATICALLY ALIGNING AN ELECTRONIC GUN COMPLEX, GENERATING SEVERAL ELECTRONIC BEAMS, WITH THE BULB OF A CATHODE RAY TUBE.
JPS56146242A (en) Positioning method of bonding position at fixed position on substrate
ES2005280A6 (en) Beam position correction device.
JPS5922325A (en) Electron beam drawing device
JPS5694740A (en) Electronic beam exposure device
JPS5279662A (en) Electron beam exposure device
JPS5572033A (en) Electron beam exposure device
JPS5437685A (en) Electron beam exposure unit
JPS62149126A (en) Method for charged beam exposure
JPS6476660A (en) Electron beam exposure equipment
JPS52130570A (en) Electron beam exposing device
JPS5318964A (en) X-ray projection and exposure system
JPS56104439A (en) Electron beam exposing method