JPS57155772A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57155772A
JPS57155772A JP56041457A JP4145781A JPS57155772A JP S57155772 A JPS57155772 A JP S57155772A JP 56041457 A JP56041457 A JP 56041457A JP 4145781 A JP4145781 A JP 4145781A JP S57155772 A JPS57155772 A JP S57155772A
Authority
JP
Japan
Prior art keywords
film
type
polycrystal silicon
metal silicide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56041457A
Other languages
English (en)
Japanese (ja)
Other versions
JPS647509B2 (enrdf_load_stackoverflow
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56041457A priority Critical patent/JPS57155772A/ja
Publication of JPS57155772A publication Critical patent/JPS57155772A/ja
Publication of JPS647509B2 publication Critical patent/JPS647509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP56041457A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041457A JPS57155772A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041457A JPS57155772A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57155772A true JPS57155772A (en) 1982-09-25
JPS647509B2 JPS647509B2 (enrdf_load_stackoverflow) 1989-02-09

Family

ID=12608897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041457A Granted JPS57155772A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155772A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132663A (ja) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp トランジスタ
JPS60103669A (ja) * 1983-11-10 1985-06-07 Mitsubishi Electric Corp 半導体装置とその製造方法
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03295612A (ja) * 1990-04-12 1991-12-26 Moriyama Kogyo Kk コンクリート製中空製品の製造方法及びその成形型枠装置及びそれに使用する内型枠

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132663A (ja) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp トランジスタ
JPS60103669A (ja) * 1983-11-10 1985-06-07 Mitsubishi Electric Corp 半導体装置とその製造方法
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Also Published As

Publication number Publication date
JPS647509B2 (enrdf_load_stackoverflow) 1989-02-09

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