JPS57153479A - Nitride gallium light emitting element - Google Patents
Nitride gallium light emitting elementInfo
- Publication number
- JPS57153479A JPS57153479A JP3896381A JP3896381A JPS57153479A JP S57153479 A JPS57153479 A JP S57153479A JP 3896381 A JP3896381 A JP 3896381A JP 3896381 A JP3896381 A JP 3896381A JP S57153479 A JPS57153479 A JP S57153479A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- area
- solder
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 6
- 229910000679 solder Inorganic materials 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3896381A JPS57153479A (en) | 1981-03-17 | 1981-03-17 | Nitride gallium light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3896381A JPS57153479A (en) | 1981-03-17 | 1981-03-17 | Nitride gallium light emitting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57153479A true JPS57153479A (en) | 1982-09-22 |
JPS6222556B2 JPS6222556B2 (US08124630-20120228-C00152.png) | 1987-05-19 |
Family
ID=12539819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3896381A Granted JPS57153479A (en) | 1981-03-17 | 1981-03-17 | Nitride gallium light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57153479A (US08124630-20120228-C00152.png) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
JPH08316529A (ja) * | 1996-05-16 | 1996-11-29 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
KR100622823B1 (ko) | 2004-05-07 | 2006-09-14 | 엘지전자 주식회사 | 발광 소자의 제조 방법 |
EP2262017A3 (en) * | 2001-07-23 | 2017-01-04 | Cree, Inc. | Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding |
-
1981
- 1981-03-17 JP JP3896381A patent/JPS57153479A/ja active Granted
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593599B1 (en) | 1990-02-28 | 2003-07-15 | Japan Science And Technology Corporation | Light-emitting semiconductor device using gallium nitride group compound |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6984536B2 (en) | 1990-02-28 | 2006-01-10 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6607595B1 (en) | 1990-02-28 | 2003-08-19 | Toyoda Gosei Co., Ltd. | Method for producing a light-emitting semiconductor device |
US6472689B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Light emitting device |
US6472690B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Gallium nitride group compound semiconductor |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
USRE36747E (en) * | 1992-07-23 | 2000-06-27 | Toyoda Gosei Co., Ltd | Light-emitting device of gallium nitride compound semiconductor |
EP1313153A2 (en) * | 1992-07-23 | 2003-05-21 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
EP1313153A3 (en) * | 1992-07-23 | 2005-05-04 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
JPH08316529A (ja) * | 1996-05-16 | 1996-11-29 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
EP2262017A3 (en) * | 2001-07-23 | 2017-01-04 | Cree, Inc. | Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding |
KR100622823B1 (ko) | 2004-05-07 | 2006-09-14 | 엘지전자 주식회사 | 발광 소자의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS6222556B2 (US08124630-20120228-C00152.png) | 1987-05-19 |
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