JPS57148372A - Method for charge transfer - Google Patents

Method for charge transfer

Info

Publication number
JPS57148372A
JPS57148372A JP3333181A JP3333181A JPS57148372A JP S57148372 A JPS57148372 A JP S57148372A JP 3333181 A JP3333181 A JP 3333181A JP 3333181 A JP3333181 A JP 3333181A JP S57148372 A JPS57148372 A JP S57148372A
Authority
JP
Japan
Prior art keywords
charge
electrode
region
transfer
driving voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3333181A
Other languages
Japanese (ja)
Inventor
Mitsuaki Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3333181A priority Critical patent/JPS57148372A/en
Publication of JPS57148372A publication Critical patent/JPS57148372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enable to increase the quantity of charge handled pertaining to transfer by a method wherein the rise and fall of driving voltage of a charge accumulation electrode is delayed as compared with those of a charge transfer electrode. CONSTITUTION:A pulse type driving voltage P1 and P2 is supplied to a charge accumulation region electrode 3s through the intermediary of a delaying device 5 which is used to delay the rise and fall of the driving voltage. When the amplitude of voltage P1 and P2 is set at VP, and the condition P1=0, P2=VP is changed to P1=VP P2=0, the voltage variation given to the electrode 3s is delayed by the device 5. Accordingly, the handling quantity of charge in this case can be determined by the product of the capacitance CS of a charge accumulation region SP2 (or SP1) and the interfacial potential difference VB1 between the region SP2 and a charge transfer region TP2 in a transit state. If the variation of the interfacial electrode of the region SP2 and SP1 at this time is supposed to be DELTAV, DELTAV<1/2VP is obtained, which becomes VB1>VB. Accordingly, CS.VB1>CS.VB is obtained, and the quantity of charge handled pertaining to the transfer can be increased.
JP3333181A 1981-03-09 1981-03-09 Method for charge transfer Pending JPS57148372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3333181A JPS57148372A (en) 1981-03-09 1981-03-09 Method for charge transfer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3333181A JPS57148372A (en) 1981-03-09 1981-03-09 Method for charge transfer

Publications (1)

Publication Number Publication Date
JPS57148372A true JPS57148372A (en) 1982-09-13

Family

ID=12383570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3333181A Pending JPS57148372A (en) 1981-03-09 1981-03-09 Method for charge transfer

Country Status (1)

Country Link
JP (1) JPS57148372A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257573A (en) * 1984-06-04 1985-12-19 Matsushita Electronics Corp Semiconductor device
JPS6169173A (en) * 1984-09-12 1986-04-09 Sanyo Electric Co Ltd Charge coupled device
JP2008283240A (en) * 2007-05-08 2008-11-20 Sony Corp Charge transfer section and solid-state imaging apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257573A (en) * 1984-06-04 1985-12-19 Matsushita Electronics Corp Semiconductor device
JPS6169173A (en) * 1984-09-12 1986-04-09 Sanyo Electric Co Ltd Charge coupled device
JP2008283240A (en) * 2007-05-08 2008-11-20 Sony Corp Charge transfer section and solid-state imaging apparatus

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