JPS57147281A - Mis field effect transistor - Google Patents

Mis field effect transistor

Info

Publication number
JPS57147281A
JPS57147281A JP57014703A JP1470382A JPS57147281A JP S57147281 A JPS57147281 A JP S57147281A JP 57014703 A JP57014703 A JP 57014703A JP 1470382 A JP1470382 A JP 1470382A JP S57147281 A JPS57147281 A JP S57147281A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
mis field
mis
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57014703A
Other languages
English (en)
Inventor
Tenohanii Ieno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS57147281A publication Critical patent/JPS57147281A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57014703A 1981-02-02 1982-02-01 Mis field effect transistor Pending JPS57147281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813103444 DE3103444A1 (de) 1981-02-02 1981-02-02 Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand

Publications (1)

Publication Number Publication Date
JPS57147281A true JPS57147281A (en) 1982-09-11

Family

ID=6123843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57014703A Pending JPS57147281A (en) 1981-02-02 1982-02-01 Mis field effect transistor

Country Status (4)

Country Link
US (1) US4630084A (ja)
EP (1) EP0057256B1 (ja)
JP (1) JPS57147281A (ja)
DE (2) DE3103444A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151472A (ja) * 1982-12-27 1984-08-29 エヌ・ベ−・フイリップス・フル−イランペンファブリケン ラテラルｄｍｏｓトランジスタ
JPS59214254A (ja) * 1983-03-21 1984-12-04 インタ−ナシヨナル・レクチフアイヤ−・コ−ポレ−シヨン 高出力ｍｏｓｆｅｔ
JPS62145777A (ja) * 1985-12-13 1987-06-29 シリコニクス　インコ−ポレイテツド 絶縁ゲートトランジスタアレイ
JPH05283702A (ja) * 1992-04-03 1993-10-29 Hitachi Ltd 複合制御型半導体装置及びそれを使用した電力変換装置
JP2002176176A (ja) * 2000-12-08 2002-06-21 Denso Corp 半導体装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
IT1204243B (it) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento
US4962411A (en) * 1986-03-21 1990-10-09 Nippondenso Co., Ltd. Semiconductor device with current detecting function
JPH0654796B2 (ja) * 1986-07-14 1994-07-20 株式会社日立製作所 複合半導体装置
US4775879A (en) * 1987-03-18 1988-10-04 Motorola Inc. FET structure arrangement having low on resistance
US4952992A (en) * 1987-08-18 1990-08-28 Siliconix Incorporated Method and apparatus for improving the on-voltage characteristics of a semiconductor device
EP0313000B1 (de) * 1987-10-21 1998-05-06 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
US4885623A (en) * 1987-10-30 1989-12-05 Holm Kennedy James W Distributed channel-bipolar device
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer
JPH02275675A (ja) * 1988-12-29 1990-11-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
JPH0793434B2 (ja) * 1989-05-23 1995-10-09 株式会社東芝 半導体装置
WO1991003078A1 (en) * 1989-08-17 1991-03-07 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
US5381025A (en) * 1989-08-17 1995-01-10 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
JP2715399B2 (ja) * 1990-07-30 1998-02-18 株式会社デンソー 電力用半導体装置
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET
JPH10256550A (ja) * 1997-01-09 1998-09-25 Toshiba Corp 半導体装置
EP0865085A1 (en) * 1997-03-11 1998-09-16 STMicroelectronics S.r.l. Insulated gate bipolar transistor with high dynamic ruggedness
GB0419556D0 (en) * 2004-09-03 2004-10-06 Koninkl Philips Electronics Nv Semiconductor device
CN101512738B (zh) * 2006-09-22 2013-03-27 飞思卡尔半导体公司 半导体器件和形成半导体器件的方法
US8148748B2 (en) * 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
US8643055B2 (en) 2007-09-26 2014-02-04 Stmicroelectronics N.V. Series current limiter device
EP2232559B1 (en) * 2007-09-26 2019-05-15 STMicroelectronics N.V. Adjustable field effect rectifier
US8633521B2 (en) 2007-09-26 2014-01-21 Stmicroelectronics N.V. Self-bootstrapping field effect diode structures and methods

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3439237A (en) * 1966-10-31 1969-04-15 Gen Electric Analogue unijunction device
DE2215167A1 (de) * 1971-04-01 1972-10-12 Matsushita Electric Ind Co Ltd Halbleitersteuervornchtung
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
JPS5370679A (en) * 1976-12-06 1978-06-23 Nippon Gakki Seizo Kk Transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPS54112179A (en) * 1978-02-23 1979-09-01 Sony Corp Semiconductor device
JPS54116887A (en) * 1978-03-02 1979-09-11 Nec Corp Mos type semiconductor device
JPS54144182A (en) * 1978-05-02 1979-11-10 Toshiba Corp Semiconductor device
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151472A (ja) * 1982-12-27 1984-08-29 エヌ・ベ−・フイリップス・フル−イランペンファブリケン ラテラルｄｍｏｓトランジスタ
JPH0518267B2 (ja) * 1982-12-27 1993-03-11 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS59214254A (ja) * 1983-03-21 1984-12-04 インタ−ナシヨナル・レクチフアイヤ−・コ−ポレ−シヨン 高出力ｍｏｓｆｅｔ
JPH0414511B2 (ja) * 1983-03-21 1992-03-13 Intaanashonaru Rekuchifuaiyaa Corp
JPH06318708A (ja) * 1983-03-21 1994-11-15 Internatl Rectifier Corp 高出力ｍｏｓｆｅｔ
JPS62145777A (ja) * 1985-12-13 1987-06-29 シリコニクス　インコ−ポレイテツド 絶縁ゲートトランジスタアレイ
JPH05283702A (ja) * 1992-04-03 1993-10-29 Hitachi Ltd 複合制御型半導体装置及びそれを使用した電力変換装置
JP2002176176A (ja) * 2000-12-08 2002-06-21 Denso Corp 半導体装置

Also Published As

Publication number Publication date
EP0057256A2 (de) 1982-08-11
DE3103444A1 (de) 1982-10-21
EP0057256A3 (en) 1982-12-22
DE3170626D1 (en) 1985-06-27
EP0057256B1 (de) 1985-05-22
US4630084A (en) 1986-12-16

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