JPS57147273A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57147273A
JPS57147273A JP56032091A JP3209181A JPS57147273A JP S57147273 A JPS57147273 A JP S57147273A JP 56032091 A JP56032091 A JP 56032091A JP 3209181 A JP3209181 A JP 3209181A JP S57147273 A JPS57147273 A JP S57147273A
Authority
JP
Japan
Prior art keywords
film
substrate
sio2
cvd method
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56032091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410106B2 (enrdf_load_stackoverflow
Inventor
Shuichi Suzuki
Fukuji Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56032091A priority Critical patent/JPS57147273A/ja
Publication of JPS57147273A publication Critical patent/JPS57147273A/ja
Publication of JPS6410106B2 publication Critical patent/JPS6410106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP56032091A 1981-03-06 1981-03-06 Manufacture of semiconductor device Granted JPS57147273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56032091A JPS57147273A (en) 1981-03-06 1981-03-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56032091A JPS57147273A (en) 1981-03-06 1981-03-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57147273A true JPS57147273A (en) 1982-09-11
JPS6410106B2 JPS6410106B2 (enrdf_load_stackoverflow) 1989-02-21

Family

ID=12349203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56032091A Granted JPS57147273A (en) 1981-03-06 1981-03-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57147273A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351079A (ja) * 1986-08-20 1988-03-04 松下電器産業株式会社 高周波加熱装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351079A (ja) * 1986-08-20 1988-03-04 松下電器産業株式会社 高周波加熱装置

Also Published As

Publication number Publication date
JPS6410106B2 (enrdf_load_stackoverflow) 1989-02-21

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