JPS57143852A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57143852A
JPS57143852A JP2932981A JP2932981A JPS57143852A JP S57143852 A JPS57143852 A JP S57143852A JP 2932981 A JP2932981 A JP 2932981A JP 2932981 A JP2932981 A JP 2932981A JP S57143852 A JPS57143852 A JP S57143852A
Authority
JP
Japan
Prior art keywords
integrated circuit
line voltage
junction diode
terminal
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2932981A
Other languages
Japanese (ja)
Inventor
Osamu Oguchi
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2932981A priority Critical patent/JPS57143852A/en
Publication of JPS57143852A publication Critical patent/JPS57143852A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the effect of the variation of line voltage by mounting a constant-voltage generating circuit consisting of a polycrystal Si P-N junction diode, an impedance element containing a resistance component and a capacitor to an MOS type integrated circuit. CONSTITUTION:The electrode at the N side of at least one P-N junction diode (three in the figure) composed of polycrystal Si is connected to a grounding terminal and an electrode at the P side is connected to a line voltage supply terminal VDD through at least one resistor R. A node between the P-N junction diode D and the resistor R is connected to a grouding terminal through at least one capacitor C while a reference-level output terminal VR is connected to said node, and the constant-voltage generating circuit of the MOS type integrated circuit is formed. Accordingly, a clamping diode can be shaped through a simple process, and a fixed reference level can be obtained at all times regardless of the variation of line voltage.
JP2932981A 1981-03-03 1981-03-03 Semiconductor integrated circuit device Pending JPS57143852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2932981A JPS57143852A (en) 1981-03-03 1981-03-03 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2932981A JPS57143852A (en) 1981-03-03 1981-03-03 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57143852A true JPS57143852A (en) 1982-09-06

Family

ID=12273188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2932981A Pending JPS57143852A (en) 1981-03-03 1981-03-03 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57143852A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947766A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Insulated gate type semiconducor device and manufacture thereof
JPS63301625A (en) * 1987-06-01 1988-12-08 Nippon Denso Co Ltd A/d converting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134780A (en) * 1974-04-15 1975-10-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134780A (en) * 1974-04-15 1975-10-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947766A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Insulated gate type semiconducor device and manufacture thereof
JPS63301625A (en) * 1987-06-01 1988-12-08 Nippon Denso Co Ltd A/d converting device

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