JPS57141098A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57141098A
JPS57141098A JP2649881A JP2649881A JPS57141098A JP S57141098 A JPS57141098 A JP S57141098A JP 2649881 A JP2649881 A JP 2649881A JP 2649881 A JP2649881 A JP 2649881A JP S57141098 A JPS57141098 A JP S57141098A
Authority
JP
Japan
Prior art keywords
electrons
charged
trs
information
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2649881A
Other languages
English (en)
Inventor
Nobuo Fukazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2649881A priority Critical patent/JPS57141098A/ja
Publication of JPS57141098A publication Critical patent/JPS57141098A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
JP2649881A 1981-02-25 1981-02-25 Semiconductor device Pending JPS57141098A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2649881A JPS57141098A (en) 1981-02-25 1981-02-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2649881A JPS57141098A (en) 1981-02-25 1981-02-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57141098A true JPS57141098A (en) 1982-09-01

Family

ID=12195147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2649881A Pending JPS57141098A (en) 1981-02-25 1981-02-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57141098A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188234A (ja) * 1983-04-11 1984-10-25 Hitachi Ltd 半導体集積回路装置及びその製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188234A (ja) * 1983-04-11 1984-10-25 Hitachi Ltd 半導体集積回路装置及びその製法

Similar Documents

Publication Publication Date Title
US4689504A (en) High voltage decoder
US4733371A (en) Semiconductor memory device with high voltage switch
EP0255963B1 (en) Nonvolatile semiconductor memory including means for detecting completion of writing operation
US4443718A (en) Nonvolatile semiconductor memory with stabilized level shift circuit
GB2062388A (en) Method of programming and electrically alterable read only memory
EP0739016A3 (en) Non-volatile semiconductor memory device with block erase function
JPH0746515B2 (ja) デコ−ダ回路
US4536859A (en) Cross-coupled inverters static random access memory
JPS6425394A (en) Nonvolatile semiconductor memory device
JP3647434B2 (ja) チャージポンプ回路
US5105384A (en) Low current semiconductor memory device
GB2000407A (en) Volatile/non-volatile latch
EP0218238A1 (en) Differential amplifier circuit
JPS5538624A (en) Nonvolatile semiconductor memory device
KR0147240B1 (ko) 바이어스 제어 회로를 갖는 반도체 메모리 디바이스
KR910003387B1 (ko) 주승압회로의 출력전압승압용 부승압회로
JPS57141098A (en) Semiconductor device
JPS5357771A (en) Non-volatile memory transistor
JPS57143795A (en) Nonvolatile semiconductor storage device
US6236595B1 (en) Programming method for a memory cell
JPS5792489A (en) Semiconductor storage device
JPH0252890B2 (ja)
IE843126L (en) Semiconductor device
JPS5792490A (en) Semiconductor storage device
JPS5469037A (en) Data erasing method for nonvolatile semiconductor memory element