JPS57140318A - Manufacture of substrate having stuck electrically conductive transparent film - Google Patents

Manufacture of substrate having stuck electrically conductive transparent film

Info

Publication number
JPS57140318A
JPS57140318A JP2564781A JP2564781A JPS57140318A JP S57140318 A JPS57140318 A JP S57140318A JP 2564781 A JP2564781 A JP 2564781A JP 2564781 A JP2564781 A JP 2564781A JP S57140318 A JPS57140318 A JP S57140318A
Authority
JP
Japan
Prior art keywords
vacuum
in2o3
substrate
sno
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2564781A
Other languages
Japanese (ja)
Inventor
Shozaburo Nishikawa
Hiroshi Ikeizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP2564781A priority Critical patent/JPS57140318A/en
Publication of JPS57140318A publication Critical patent/JPS57140318A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/407Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Liquid Crystal (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

PURPOSE:To form a vacuum-deposited film with superior electric conductivity, heat stabilty and transparency by adding a specified percentage of Cl2 to the total amount of In2O3 and SnO when a mixture of them is vacuum-deposited on a glass substrate. CONSTITUTION:In2O3 or SnO-contg. In2O3 is vacuum-deposited on a glass substarate to form an electrode for a liq. crystal display element. At this time, to the starting material for vacuum deposition is added a chloride such as indium chloride, tin chloride dihydrate or dibutyltin dichloride by 0.02-0.5wt% as chlorine to the total amount of the In2O3 and SnO. Thus, the vacuum-deposited film has superior transparency without deteriorating the electric conductivity and heat stability, and an electrode substrate having the film for the liq. crystal display element can be manufactured.
JP2564781A 1981-02-24 1981-02-24 Manufacture of substrate having stuck electrically conductive transparent film Pending JPS57140318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2564781A JPS57140318A (en) 1981-02-24 1981-02-24 Manufacture of substrate having stuck electrically conductive transparent film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2564781A JPS57140318A (en) 1981-02-24 1981-02-24 Manufacture of substrate having stuck electrically conductive transparent film

Publications (1)

Publication Number Publication Date
JPS57140318A true JPS57140318A (en) 1982-08-30

Family

ID=12171614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2564781A Pending JPS57140318A (en) 1981-02-24 1981-02-24 Manufacture of substrate having stuck electrically conductive transparent film

Country Status (1)

Country Link
JP (1) JPS57140318A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247256A (en) * 1988-06-22 1990-02-16 Boc Group Inc:The Formation of an oxide coating by reactive-sputtering
US4975388A (en) * 1988-06-03 1990-12-04 U.S. Philips Corporation Method of forming epitaxial layers
JPH07274646A (en) * 1995-02-07 1995-10-24 Iseki & Co Ltd Riding type rice transplanter with fertilizing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975388A (en) * 1988-06-03 1990-12-04 U.S. Philips Corporation Method of forming epitaxial layers
JPH0247256A (en) * 1988-06-22 1990-02-16 Boc Group Inc:The Formation of an oxide coating by reactive-sputtering
JPH07274646A (en) * 1995-02-07 1995-10-24 Iseki & Co Ltd Riding type rice transplanter with fertilizing device

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