JPS5713741A - Emitting method for charged particle beam in manufacture of semiconductor device - Google Patents
Emitting method for charged particle beam in manufacture of semiconductor deviceInfo
- Publication number
- JPS5713741A JPS5713741A JP8741380A JP8741380A JPS5713741A JP S5713741 A JPS5713741 A JP S5713741A JP 8741380 A JP8741380 A JP 8741380A JP 8741380 A JP8741380 A JP 8741380A JP S5713741 A JPS5713741 A JP S5713741A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- side face
- resist
- charged particle
- particle beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To eliminate the problem of storing charge and the occurrence of stress by removing only an insulating film at the side face of a semiconductor substrate and emitting charged particle beam while maintaining an electric contact via the side face of the substrate. CONSTITUTION:An electron sensitive resist 508 is coated on a machined silicon oxidized film 202, is installed on an electron beam exposure device at a specimen base 510, an electron beam of approx. 10-30kV of accelerating voltage is emitted, is passed through the oxidized film while partly applying the energy to the resist, is thus arrived at a semiconductor substrate 101, is then escaped to an earth through a wire 509 formed at the side face from which an insulating film is removed, thereby preventing the charging of the substrate 101 and performing a normal exposure. After the exposure is finished, the resist is exfoliated by dry etching, and a patternd oxidized film can be obtained. In this manner, the deformation of the substrate can be reduced, and the diffusion of the impurity can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8741380A JPS5713741A (en) | 1980-06-27 | 1980-06-27 | Emitting method for charged particle beam in manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8741380A JPS5713741A (en) | 1980-06-27 | 1980-06-27 | Emitting method for charged particle beam in manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5713741A true JPS5713741A (en) | 1982-01-23 |
Family
ID=13914183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8741380A Pending JPS5713741A (en) | 1980-06-27 | 1980-06-27 | Emitting method for charged particle beam in manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5713741A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS551110A (en) * | 1978-06-16 | 1980-01-07 | Fujitsu Ltd | Exposure to electron beam |
JPS5534478A (en) * | 1978-09-01 | 1980-03-11 | Nec Corp | Forming pattern |
-
1980
- 1980-06-27 JP JP8741380A patent/JPS5713741A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS551110A (en) * | 1978-06-16 | 1980-01-07 | Fujitsu Ltd | Exposure to electron beam |
JPS5534478A (en) * | 1978-09-01 | 1980-03-11 | Nec Corp | Forming pattern |
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