JPS57134969A - N-p-n lateral transistor array and method of forming same - Google Patents

N-p-n lateral transistor array and method of forming same

Info

Publication number
JPS57134969A
JPS57134969A JP56216179A JP21617981A JPS57134969A JP S57134969 A JPS57134969 A JP S57134969A JP 56216179 A JP56216179 A JP 56216179A JP 21617981 A JP21617981 A JP 21617981A JP S57134969 A JPS57134969 A JP S57134969A
Authority
JP
Japan
Prior art keywords
transistor array
forming same
lateral transistor
lateral
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56216179A
Other languages
English (en)
Inventor
Aizatsuku Sokurofu Shidonii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of JPS57134969A publication Critical patent/JPS57134969A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56216179A 1980-12-29 1981-12-24 N-p-n lateral transistor array and method of forming same Pending JPS57134969A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/220,400 US4415371A (en) 1980-12-29 1980-12-29 Method of making sub-micron dimensioned NPN lateral transistor

Publications (1)

Publication Number Publication Date
JPS57134969A true JPS57134969A (en) 1982-08-20

Family

ID=22823399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56216179A Pending JPS57134969A (en) 1980-12-29 1981-12-24 N-p-n lateral transistor array and method of forming same

Country Status (3)

Country Link
US (1) US4415371A (ja)
EP (1) EP0055411A3 (ja)
JP (1) JPS57134969A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583278A (ja) * 1981-06-25 1983-01-10 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン 極小領域ｐｎｐラテラルトランジスタおよびその製造方法
JPS5810865A (ja) * 1981-07-01 1983-01-21 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン ラテラルｐｎｐトランジスタおよびその製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4508579A (en) * 1981-03-30 1985-04-02 International Business Machines Corporation Lateral device structures using self-aligned fabrication techniques
JPS58165341A (ja) * 1982-03-26 1983-09-30 Toshiba Corp 半導体装置の製造方法
US4947225A (en) * 1986-04-28 1990-08-07 Rockwell International Corporation Sub-micron devices with method for forming sub-micron contacts
US5200353A (en) * 1987-06-29 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having trench capacitor
US5051805A (en) * 1987-07-15 1991-09-24 Rockwell International Corporation Sub-micron bipolar devices with sub-micron contacts
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
US5112762A (en) * 1990-12-05 1992-05-12 Anderson Dirk N High angle implant around top of trench to reduce gated diode leakage
US5872044A (en) * 1994-06-15 1999-02-16 Harris Corporation Late process method for trench isolation
US5482873A (en) * 1995-04-14 1996-01-09 United Microelectronics Corporation Method for fabricating a bipolar power transistor
US5920108A (en) * 1995-06-05 1999-07-06 Harris Corporation Late process method and apparatus for trench isolation
US5668018A (en) * 1995-06-07 1997-09-16 International Business Machines Corporation Method for defining a region on a wall of a semiconductor structure
GB9512089D0 (en) * 1995-06-14 1995-08-09 Evans Jonathan L Semiconductor device fabrication
KR0165457B1 (ko) * 1995-10-25 1999-02-01 김광호 트렌치 소자분리 방법
JPH10223775A (ja) * 1997-01-31 1998-08-21 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US6133123A (en) 1997-08-21 2000-10-17 Micron Technology, Inc. Fabrication of semiconductor gettering structures by ion implantation
US6316806B1 (en) 1999-03-31 2001-11-13 Fairfield Semiconductor Corporation Trench transistor with a self-aligned source
JP4928947B2 (ja) * 2003-12-19 2012-05-09 サード ディメンジョン （スリーディ） セミコンダクタ インコーポレイテッド 超接合デバイスの製造方法
US7327008B2 (en) * 2005-01-24 2008-02-05 International Business Machines Corporation Structure and method for mixed-substrate SIMOX technology

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145276A (en) * 1975-06-10 1976-12-14 Mitsubishi Electric Corp Semiconductor device
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
US4264382A (en) * 1978-05-25 1981-04-28 International Business Machines Corporation Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions
JPS55105324A (en) * 1979-02-05 1980-08-12 Semiconductor Res Found Manufacturing method and apparatus of semiconductor device
US4211582A (en) * 1979-06-28 1980-07-08 International Business Machines Corporation Process for making large area isolation trenches utilizing a two-step selective etching technique
US4309812A (en) * 1980-03-03 1982-01-12 International Business Machines Corporation Process for fabricating improved bipolar transistor utilizing selective etching
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4339767A (en) * 1980-05-05 1982-07-13 International Business Machines Corporation High performance PNP and NPN transistor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583278A (ja) * 1981-06-25 1983-01-10 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン 極小領域ｐｎｐラテラルトランジスタおよびその製造方法
JPS5810865A (ja) * 1981-07-01 1983-01-21 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン ラテラルｐｎｐトランジスタおよびその製造方法

Also Published As

Publication number Publication date
EP0055411A2 (en) 1982-07-07
US4415371A (en) 1983-11-15
EP0055411A3 (en) 1982-08-25

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