JPS5712570A - Semiconductor photoelectric converter - Google Patents

Semiconductor photoelectric converter

Info

Publication number
JPS5712570A
JPS5712570A JP8730480A JP8730480A JPS5712570A JP S5712570 A JPS5712570 A JP S5712570A JP 8730480 A JP8730480 A JP 8730480A JP 8730480 A JP8730480 A JP 8730480A JP S5712570 A JPS5712570 A JP S5712570A
Authority
JP
Japan
Prior art keywords
electrodes
light
layers
main face
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8730480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259476B2 (enrdf_load_stackoverflow
Inventor
Takeshi Kobayashi
Eiichi Yamaguchi
Masamichi Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8730480A priority Critical patent/JPS5712570A/ja
Publication of JPS5712570A publication Critical patent/JPS5712570A/ja
Publication of JPS6259476B2 publication Critical patent/JPS6259476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Landscapes

  • Light Receiving Elements (AREA)
JP8730480A 1980-06-27 1980-06-27 Semiconductor photoelectric converter Granted JPS5712570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8730480A JPS5712570A (en) 1980-06-27 1980-06-27 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8730480A JPS5712570A (en) 1980-06-27 1980-06-27 Semiconductor photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5712570A true JPS5712570A (en) 1982-01-22
JPS6259476B2 JPS6259476B2 (enrdf_load_stackoverflow) 1987-12-11

Family

ID=13911080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8730480A Granted JPS5712570A (en) 1980-06-27 1980-06-27 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5712570A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0212120A1 (en) * 1985-06-21 1987-03-04 Itt Industries, Inc. Field effect phototransistor
JPH0362977A (ja) * 1989-07-31 1991-03-19 Mitsubishi Electric Corp 長波長アバランシエフォトダイオード
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
US5596209A (en) * 1994-05-09 1997-01-21 Lockheed Sanders, Inc. Photoconductive semiconductor control device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51285A (enrdf_load_stackoverflow) * 1974-06-19 1976-01-05 Matsushita Electric Ind Co Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51285A (enrdf_load_stackoverflow) * 1974-06-19 1976-01-05 Matsushita Electric Ind Co Ltd

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0212120A1 (en) * 1985-06-21 1987-03-04 Itt Industries, Inc. Field effect phototransistor
JPH0362977A (ja) * 1989-07-31 1991-03-19 Mitsubishi Electric Corp 長波長アバランシエフォトダイオード
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
US5596209A (en) * 1994-05-09 1997-01-21 Lockheed Sanders, Inc. Photoconductive semiconductor control device

Also Published As

Publication number Publication date
JPS6259476B2 (enrdf_load_stackoverflow) 1987-12-11

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