JPS5712497A - Integrated circuit device for memory - Google Patents

Integrated circuit device for memory

Info

Publication number
JPS5712497A
JPS5712497A JP8536280A JP8536280A JPS5712497A JP S5712497 A JPS5712497 A JP S5712497A JP 8536280 A JP8536280 A JP 8536280A JP 8536280 A JP8536280 A JP 8536280A JP S5712497 A JPS5712497 A JP S5712497A
Authority
JP
Japan
Prior art keywords
data
read
circuit
write
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8536280A
Other languages
Japanese (ja)
Other versions
JPS6031039B2 (en
Inventor
Hidehiko Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55085362A priority Critical patent/JPS6031039B2/en
Publication of JPS5712497A publication Critical patent/JPS5712497A/en
Publication of JPS6031039B2 publication Critical patent/JPS6031039B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing

Abstract

PURPOSE:To realize a high-speed test at a time and every data group, by providing a test data generating circuit and a means to write and read the data group into an IC for memory and then comparing the read-out data withe an expected value with every data group. CONSTITUTION:When a read/write control signal 104 is in a write state, a test data 403 is given and written to storage cells j0-jn (i=0,1-n) from a test data generating circuit 7 via a write data selection circuit 4 and in the form of write data 210-21n. While in case the signal 104 is in a reading state, a reading is carried out at a time to cells j0-jn. At the same time, the data 403 is delivered from the circuit 7 to be supplied to a comparator 6. The circuit 6 compares data 200-20n with an expected value data 403. If a coincidence is obtained, a coincidence signal 405 is applied to a read data selection circuit 5. Then the signal 405 is delivered from the circuit 5 by a read data control signal 401 and in the form of a read data 101.
JP55085362A 1980-06-24 1980-06-24 Integrated circuit device for memory Expired JPS6031039B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55085362A JPS6031039B2 (en) 1980-06-24 1980-06-24 Integrated circuit device for memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55085362A JPS6031039B2 (en) 1980-06-24 1980-06-24 Integrated circuit device for memory

Publications (2)

Publication Number Publication Date
JPS5712497A true JPS5712497A (en) 1982-01-22
JPS6031039B2 JPS6031039B2 (en) 1985-07-19

Family

ID=13856595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55085362A Expired JPS6031039B2 (en) 1980-06-24 1980-06-24 Integrated circuit device for memory

Country Status (1)

Country Link
JP (1) JPS6031039B2 (en)

Also Published As

Publication number Publication date
JPS6031039B2 (en) 1985-07-19

Similar Documents

Publication Publication Date Title
ATE24617T1 (en) DIRECT ACCESS STORAGE ARRANGEMENTS.
HK23292A (en) Process for operating a semiconductor memory with integrated parallel test capability and evaluation circuit for carrying out the process
HK167795A (en) Integrated semiconductor store with parallel test facility and redundancy process
EP0322865A3 (en) Memory testing device
EP0193210A3 (en) Semiconductor memory device with a built-in test circuit
JPS57189397A (en) Semiconductor storage device
JPS57111893A (en) Relieving system of defective memory
JPS5712497A (en) Integrated circuit device for memory
JPS573298A (en) Memory integrated circuit
JPS6443897A (en) Non-volatile semiconductor memory device capable of being erased and written electrically
JPS5712496A (en) Integrated circuit device for memory
JPS5712498A (en) Integrated circuit device for memory
JPS55163697A (en) Memory device
JPS6446300A (en) Semiconductor memory
EP0263312A3 (en) Semiconductor memory device with a self-testing function
JPS56137580A (en) Semiconductor storage device
JPS5613585A (en) Semiconductor memory circuit
JPS57103187A (en) Semiconductor storage element
JPS54161238A (en) Testing method for magnetic bubble memory
JPS5452946A (en) Semiconductor element
JPS5671885A (en) Semiconductor memory
JPS57135498A (en) Semiconductor memory
JPS5710853A (en) Memory device
JPS5469035A (en) Magnetic bubble cassette memory
JPS5654698A (en) Test method of memory device