JPS57120296A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS57120296A JPS57120296A JP617281A JP617281A JPS57120296A JP S57120296 A JPS57120296 A JP S57120296A JP 617281 A JP617281 A JP 617281A JP 617281 A JP617281 A JP 617281A JP S57120296 A JPS57120296 A JP S57120296A
- Authority
- JP
- Japan
- Prior art keywords
- erasure
- cell
- source
- gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP617281A JPS57120296A (en) | 1981-01-19 | 1981-01-19 | Semiconductor storage device |
US06/320,937 US4437174A (en) | 1981-01-19 | 1981-11-13 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP617281A JPS57120296A (en) | 1981-01-19 | 1981-01-19 | Semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57120296A true JPS57120296A (en) | 1982-07-27 |
JPS6130351B2 JPS6130351B2 (fr) | 1986-07-12 |
Family
ID=11631124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP617281A Granted JPS57120296A (en) | 1981-01-19 | 1981-01-19 | Semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57120296A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02113495A (ja) * | 1988-10-21 | 1990-04-25 | Nec Corp | 半導体装置 |
-
1981
- 1981-01-19 JP JP617281A patent/JPS57120296A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02113495A (ja) * | 1988-10-21 | 1990-04-25 | Nec Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6130351B2 (fr) | 1986-07-12 |
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