JPS57118686A - Coupling of semiconductor laser and photo waveguide - Google Patents
Coupling of semiconductor laser and photo waveguideInfo
- Publication number
- JPS57118686A JPS57118686A JP559281A JP559281A JPS57118686A JP S57118686 A JPS57118686 A JP S57118686A JP 559281 A JP559281 A JP 559281A JP 559281 A JP559281 A JP 559281A JP S57118686 A JPS57118686 A JP S57118686A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- substrate
- waveguide
- photo
- photo waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
PURPOSE:To facilitate and perform with precision the positioning of a semiconductor laser relative to a photo waveguide by a method wherein an Si substrate serving as a support is partly transformed into a well by an anisotropic etching technique wherein a semiconductor laser or a photo waveguide is fixedly placed. CONSTITUTION:An SiO2 mask 2 is formed on an Si substrate 1 with the plane direction (110) so that the pattern end and the direction <001> may form an angle of 35.3 deg.. Next, the Si substrate 1 is subjected to etching by using an anistropic etching fluid such as APW for the formation of a well 5 furnished with a vertical wall. Then a semiconductor laser chip 6 is fixedly placed in the well 5. A substrate 8 is placed with the surface provided with the photo waveguide 9 facing down on the SiO2 mask 2 so that it may be pressedly fixed upon the laser chip 6. This method couples the active layer 7 and the photo waveguide 9 with precision.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP559281A JPS57118686A (en) | 1981-01-16 | 1981-01-16 | Coupling of semiconductor laser and photo waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP559281A JPS57118686A (en) | 1981-01-16 | 1981-01-16 | Coupling of semiconductor laser and photo waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57118686A true JPS57118686A (en) | 1982-07-23 |
Family
ID=11615501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP559281A Pending JPS57118686A (en) | 1981-01-16 | 1981-01-16 | Coupling of semiconductor laser and photo waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57118686A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131104A (en) * | 1986-11-20 | 1988-06-03 | Nippon Telegr & Teleph Corp <Ntt> | Hybrid optical integrated circuit |
| US5297218A (en) * | 1991-12-20 | 1994-03-22 | Sony Corporation | Optical semiconductor laser and optical waveguide alignment device |
-
1981
- 1981-01-16 JP JP559281A patent/JPS57118686A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131104A (en) * | 1986-11-20 | 1988-06-03 | Nippon Telegr & Teleph Corp <Ntt> | Hybrid optical integrated circuit |
| US5297218A (en) * | 1991-12-20 | 1994-03-22 | Sony Corporation | Optical semiconductor laser and optical waveguide alignment device |
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