JPS57118666A - Complementary mos integrated circuit device - Google Patents

Complementary mos integrated circuit device

Info

Publication number
JPS57118666A
JPS57118666A JP56114772A JP11477281A JPS57118666A JP S57118666 A JPS57118666 A JP S57118666A JP 56114772 A JP56114772 A JP 56114772A JP 11477281 A JP11477281 A JP 11477281A JP S57118666 A JPS57118666 A JP S57118666A
Authority
JP
Japan
Prior art keywords
type
layer
isolation layer
integrated circuit
complementary mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56114772A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643066B2 (enrdf_load_stackoverflow
Inventor
Junichi Mogi
Kiyoshi Miyasaka
Fumio Baba
Tatsuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56114772A priority Critical patent/JPS57118666A/ja
Publication of JPS57118666A publication Critical patent/JPS57118666A/ja
Publication of JPS643066B2 publication Critical patent/JPS643066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • H10D84/858Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56114772A 1981-07-22 1981-07-22 Complementary mos integrated circuit device Granted JPS57118666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56114772A JPS57118666A (en) 1981-07-22 1981-07-22 Complementary mos integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56114772A JPS57118666A (en) 1981-07-22 1981-07-22 Complementary mos integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3306372A Division JPS5710569B2 (enrdf_load_stackoverflow) 1972-03-31 1972-03-31

Publications (2)

Publication Number Publication Date
JPS57118666A true JPS57118666A (en) 1982-07-23
JPS643066B2 JPS643066B2 (enrdf_load_stackoverflow) 1989-01-19

Family

ID=14646299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56114772A Granted JPS57118666A (en) 1981-07-22 1981-07-22 Complementary mos integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57118666A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS643066B2 (enrdf_load_stackoverflow) 1989-01-19

Similar Documents

Publication Publication Date Title
JPS5529116A (en) Manufacture of complementary misic
JPS5660063A (en) Manufacture of semiconductor device
JPS57118666A (en) Complementary mos integrated circuit device
JPS6484659A (en) Manufacture of semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS54107270A (en) Semiconductor device and its production
JPS572519A (en) Manufacture of semiconductor device
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS5688362A (en) Vertical type power mos transistor
JPS5753958A (ja) Handotaisochi
JPS568849A (en) Manufacture of semiconductor integrated circuit
JPS5721865A (en) Manufacture of semiconductor device
JPS577153A (en) Preparation of semiconductor device
JPS5583268A (en) Complementary mos semiconductor device and method of fabricating the same
JPS5559778A (en) Method of fabricating semiconductor device
JPS54112165A (en) Manufacture of semiconductor integrated circuit
JPS56111264A (en) Manufacture of semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS57190362A (en) Semiconductor device
JPS57122577A (en) Manufacture of semiconductor device
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS57128958A (en) Semiconductor device
JPS56104476A (en) Manufacture of semiconductor device
JPS55125626A (en) Production of semiconductor device