JPS57118635A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57118635A
JPS57118635A JP528781A JP528781A JPS57118635A JP S57118635 A JPS57118635 A JP S57118635A JP 528781 A JP528781 A JP 528781A JP 528781 A JP528781 A JP 528781A JP S57118635 A JPS57118635 A JP S57118635A
Authority
JP
Japan
Prior art keywords
reaction tube
hydrogen ion
electrodes
hydrogen
plasma generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP528781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230686B2 (enrdf_load_stackoverflow
Inventor
Shigeaki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP528781A priority Critical patent/JPS57118635A/ja
Publication of JPS57118635A publication Critical patent/JPS57118635A/ja
Publication of JPS6230686B2 publication Critical patent/JPS6230686B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP528781A 1981-01-16 1981-01-16 Manufacture of semiconductor device Granted JPS57118635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP528781A JPS57118635A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP528781A JPS57118635A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57118635A true JPS57118635A (en) 1982-07-23
JPS6230686B2 JPS6230686B2 (enrdf_load_stackoverflow) 1987-07-03

Family

ID=11607016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP528781A Granted JPS57118635A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57118635A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910320A (ja) * 1982-07-09 1984-01-19 Asahi Chem Ind Co Ltd 「ろ」材
JPH02219225A (ja) * 1989-02-20 1990-08-31 Matsushita Electric Ind Co Ltd 膜堆積装置および膜堆積方法
US5543336A (en) * 1993-11-30 1996-08-06 Hitachi, Ltd. Removing damage caused by plasma etching and high energy implantation using hydrogen
JP2003151917A (ja) * 2001-11-09 2003-05-23 Sanyo Electric Co Ltd 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534431A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Method of treating semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534431A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Method of treating semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910320A (ja) * 1982-07-09 1984-01-19 Asahi Chem Ind Co Ltd 「ろ」材
JPH02219225A (ja) * 1989-02-20 1990-08-31 Matsushita Electric Ind Co Ltd 膜堆積装置および膜堆積方法
US5543336A (en) * 1993-11-30 1996-08-06 Hitachi, Ltd. Removing damage caused by plasma etching and high energy implantation using hydrogen
JP2003151917A (ja) * 2001-11-09 2003-05-23 Sanyo Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6230686B2 (enrdf_load_stackoverflow) 1987-07-03

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