JPS57118350A - Target for photoconductive image pickup tube - Google Patents
Target for photoconductive image pickup tubeInfo
- Publication number
- JPS57118350A JPS57118350A JP414081A JP414081A JPS57118350A JP S57118350 A JPS57118350 A JP S57118350A JP 414081 A JP414081 A JP 414081A JP 414081 A JP414081 A JP 414081A JP S57118350 A JPS57118350 A JP S57118350A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- target
- type
- image pickup
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
PURPOSE:To reduce the soak current and enhance the resolution of a target by making a semi-insulating film, which is closely in contact with a base plate made of silicon single crystal, to consist of the inner layer made up of cerium dioxide and the outer layer made up of cadmium telluride. CONSTITUTION:A base plate 1 is made up of n type silicon single crystal doped with phosphorus. Phosphorus is diffused in an n type layer 2, while boron is diffused in isle-like p type layers 3. Insulating layers 6 are made to cover the peripheral parts of the p type layers 3. In addition to the above target constitution, a semi-insulating layer, the inner side of which is a cerium dioxide layer and the outer side of which is a cadmium telluride layer, is provided on the surface across which electron beams are scanned.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP414081A JPS57118350A (en) | 1981-01-14 | 1981-01-14 | Target for photoconductive image pickup tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP414081A JPS57118350A (en) | 1981-01-14 | 1981-01-14 | Target for photoconductive image pickup tube |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57118350A true JPS57118350A (en) | 1982-07-23 |
Family
ID=11576469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP414081A Pending JPS57118350A (en) | 1981-01-14 | 1981-01-14 | Target for photoconductive image pickup tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57118350A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1670018A1 (en) * | 2003-09-30 | 2006-06-14 | Sumitomo Electric Industries, Ltd. | Process for producing diamond electron emission element and electron emission element |
-
1981
- 1981-01-14 JP JP414081A patent/JPS57118350A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1670018A1 (en) * | 2003-09-30 | 2006-06-14 | Sumitomo Electric Industries, Ltd. | Process for producing diamond electron emission element and electron emission element |
EP1670018A4 (en) * | 2003-09-30 | 2010-01-06 | Sumitomo Electric Industries | Process for producing diamond electron emission element and electron emission element |
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