JPS57117277A - Manufacture of mos semiconductor device - Google Patents
Manufacture of mos semiconductor deviceInfo
- Publication number
- JPS57117277A JPS57117277A JP366881A JP366881A JPS57117277A JP S57117277 A JPS57117277 A JP S57117277A JP 366881 A JP366881 A JP 366881A JP 366881 A JP366881 A JP 366881A JP S57117277 A JPS57117277 A JP S57117277A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- regions
- gate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000001459 lithography Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To eliminate discrepancy of positioning of a gate PR in manufacture of an MOS semiconductor device by a method wherein after thermal oxide films are formed on the main surfaces of the regions other than the regions to form a source and a drain, the source and the drain are formed by ion implantation. CONSTITUTION:An oxide film is formed on the main surface of a semiconductor substrate, and moreover nitride films 13a, 13b are made to grow. Then the main surface of the semiconductor substrate 11 at the regions other than the regions 31, 41 to form the source and the drain are made to be exposed by the lithography technique, and the thermal oxide films 21-23 are formed by high temperature oxidation. The source 31 and the drain 41 are formed by ion implantation and the high temperature treatment. The oxide film at the region to form a gate is removed, and after the nitride films 13a, 13b on the source and drain regions 31, 41 are removed, a new gate oxide film 51 is formed. Contact holes 61, 62 of the source and the drain regions 31, 41 are formed, and a metal is evaporated to form the source, drain and gate electrodes 71-73.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP366881A JPS57117277A (en) | 1981-01-12 | 1981-01-12 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP366881A JPS57117277A (en) | 1981-01-12 | 1981-01-12 | Manufacture of mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57117277A true JPS57117277A (en) | 1982-07-21 |
Family
ID=11563807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP366881A Pending JPS57117277A (en) | 1981-01-12 | 1981-01-12 | Manufacture of mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57117277A (en) |
-
1981
- 1981-01-12 JP JP366881A patent/JPS57117277A/en active Pending
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