JPS57112080A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS57112080A
JPS57112080A JP55187343A JP18734380A JPS57112080A JP S57112080 A JPS57112080 A JP S57112080A JP 55187343 A JP55187343 A JP 55187343A JP 18734380 A JP18734380 A JP 18734380A JP S57112080 A JPS57112080 A JP S57112080A
Authority
JP
Japan
Prior art keywords
layer
type
injected
fet
hemt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187343A
Other languages
English (en)
Other versions
JPS6353708B2 (ja
Inventor
Hidetoshi Nishi
Sukehisa Hiyamizu
Shigeru Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187343A priority Critical patent/JPS57112080A/ja
Priority to EP19810305986 priority patent/EP0056904B1/en
Priority to DE8181305986T priority patent/DE3171953D1/de
Publication of JPS57112080A publication Critical patent/JPS57112080A/ja
Publication of JPS6353708B2 publication Critical patent/JPS6353708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP55187343A 1980-12-29 1980-12-29 Manufacture of field-effect transistor Granted JPS57112080A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55187343A JPS57112080A (en) 1980-12-29 1980-12-29 Manufacture of field-effect transistor
EP19810305986 EP0056904B1 (en) 1980-12-29 1981-12-21 High electron mobility single heterojunction semiconductor devices and methods of production of such devices
DE8181305986T DE3171953D1 (en) 1980-12-29 1981-12-21 High electron mobility single heterojunction semiconductor devices and methods of production of such devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187343A JPS57112080A (en) 1980-12-29 1980-12-29 Manufacture of field-effect transistor

Publications (2)

Publication Number Publication Date
JPS57112080A true JPS57112080A (en) 1982-07-12
JPS6353708B2 JPS6353708B2 (ja) 1988-10-25

Family

ID=16204331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187343A Granted JPS57112080A (en) 1980-12-29 1980-12-29 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57112080A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
WO2002031886A1 (en) * 2000-10-13 2002-04-18 Kwangju Institute Of Science And Technology Monolithically integrated e/d mode hemt and method for fabricating the same
KR100499522B1 (ko) * 2001-11-03 2005-07-07 조신호 초고속 반도체 광전도 스위칭 장치

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
WO2002031886A1 (en) * 2000-10-13 2002-04-18 Kwangju Institute Of Science And Technology Monolithically integrated e/d mode hemt and method for fabricating the same
US6670652B2 (en) 2000-10-13 2003-12-30 Kwangju Institute Of Science And Technology Monolithically integrated E/D mode HEMT and method for fabricating the same
KR100499522B1 (ko) * 2001-11-03 2005-07-07 조신호 초고속 반도체 광전도 스위칭 장치

Also Published As

Publication number Publication date
JPS6353708B2 (ja) 1988-10-25

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