JPS5711155B2 - - Google Patents
Info
- Publication number
- JPS5711155B2 JPS5711155B2 JP7224275A JP7224275A JPS5711155B2 JP S5711155 B2 JPS5711155 B2 JP S5711155B2 JP 7224275 A JP7224275 A JP 7224275A JP 7224275 A JP7224275 A JP 7224275A JP S5711155 B2 JPS5711155 B2 JP S5711155B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7224275A JPS51147985A (en) | 1975-06-13 | 1975-06-13 | Method of manufacturing a semiconductor light emission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7224275A JPS51147985A (en) | 1975-06-13 | 1975-06-13 | Method of manufacturing a semiconductor light emission device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51147985A JPS51147985A (en) | 1976-12-18 |
| JPS5711155B2 true JPS5711155B2 (en, 2012) | 1982-03-02 |
Family
ID=13483612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7224275A Granted JPS51147985A (en) | 1975-06-13 | 1975-06-13 | Method of manufacturing a semiconductor light emission device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51147985A (en, 2012) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53128288A (en) * | 1977-04-13 | 1978-11-09 | Sharp Corp | Semiconductor laser element and production of the same |
| JPS53140984A (en) * | 1977-05-13 | 1978-12-08 | Sharp Corp | Semiconductor laser element and production of the same |
| JPS5471588A (en) * | 1977-11-17 | 1979-06-08 | Sharp Corp | Stripe structure and production of semiconductor laser elements |
| JPS55105393A (en) * | 1979-02-08 | 1980-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Process of semiconductor laser device |
| JPS55123190A (en) * | 1979-03-16 | 1980-09-22 | Fujitsu Ltd | Semiconductor light emitting device |
| JPS55123191A (en) * | 1979-03-16 | 1980-09-22 | Fujitsu Ltd | Semiconductor light emitting device |
| JPS55157281A (en) * | 1979-05-25 | 1980-12-06 | Fujitsu Ltd | Semiconductor light emitting device |
| JPS5638885A (en) * | 1979-09-07 | 1981-04-14 | Fujitsu Ltd | Light emission semiconductor device |
| JPS57112090A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Semiconductor laser |
| JPS57152182A (en) * | 1981-03-16 | 1982-09-20 | Nec Corp | Manufacture of semiconductor laser device |
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS603180A (ja) * | 1983-06-21 | 1985-01-09 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS6045086A (ja) * | 1983-08-22 | 1985-03-11 | Rohm Co Ltd | 半導体レ−ザおよびその製造方法 |
| JPS60110188A (ja) * | 1983-11-18 | 1985-06-15 | Sharp Corp | 半導体レ−ザ素子 |
| JPH0680675B2 (ja) * | 1984-03-06 | 1994-10-12 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS60229389A (ja) * | 1984-04-26 | 1985-11-14 | Sharp Corp | 半導体レ−ザ素子 |
| JPH07112091B2 (ja) * | 1986-03-06 | 1995-11-29 | 株式会社東芝 | 埋め込み型半導体レ−ザの製造方法 |
| JP2681431B2 (ja) * | 1991-05-31 | 1997-11-26 | 信越半導体株式会社 | 発光素子 |
-
1975
- 1975-06-13 JP JP7224275A patent/JPS51147985A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51147985A (en) | 1976-12-18 |