JPS57110076A - Booster circuit - Google Patents
Booster circuitInfo
- Publication number
- JPS57110076A JPS57110076A JP18880880A JP18880880A JPS57110076A JP S57110076 A JPS57110076 A JP S57110076A JP 18880880 A JP18880880 A JP 18880880A JP 18880880 A JP18880880 A JP 18880880A JP S57110076 A JPS57110076 A JP S57110076A
- Authority
- JP
- Japan
- Prior art keywords
- point
- time
- signal
- charged
- booster circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
PURPOSE:To obtain N (N>=3) times voltage by setting the frequency for driving the unit block of double booster circuit for producing lower stepup output to higher than that of the unit block of double booster circuit of next stage of higher stepup output. CONSTITUTION:MOSFET2 and MOSFET3 are respectively ON and OFF states according to the outputs of the output terminals Q1, Q2 of shift registers 12, 13 based on a signal CL from a terminal 11 and the inversion of an inversion signal CL from a point A at the time t1, and a point B is charged to a power voltage VSS1. The FET2 and the FET3 respectively become OFF and OFF at time t2. When these states are repeated, a point C is charged to 2VSS1. Then, an MOSFET4 and an MOSFET5 are respectively ON and OFF with a signal CL2 of the frequency of 1/2 of the signal CL at time t1+t2. Then, the FET4 and the FET5 respectively become OFF and ON at time t3. Thus, a point E will be charged to 3VSS1 soon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18880880A JPS57110076A (en) | 1980-12-25 | 1980-12-25 | Booster circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18880880A JPS57110076A (en) | 1980-12-25 | 1980-12-25 | Booster circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57110076A true JPS57110076A (en) | 1982-07-08 |
Family
ID=16230160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18880880A Pending JPS57110076A (en) | 1980-12-25 | 1980-12-25 | Booster circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57110076A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0558339A2 (en) * | 1992-02-27 | 1993-09-01 | Texas Instruments Incorporated | Charge pump circuit |
EP0678970A2 (en) * | 1994-04-20 | 1995-10-25 | Nippon Steel Corporation | Semiconductor booster circuit |
JP2004242487A (en) * | 2002-12-12 | 2004-08-26 | Nec Kansai Ltd | Boosting method and booster circuit |
JP2010022119A (en) * | 2008-07-09 | 2010-01-28 | Panasonic Corp | Internal voltage generation circuit |
JP2020530748A (en) * | 2018-07-27 | 2020-10-22 | 北京小米移動軟件有限公司Beijing Xiaomi Mobile Software Co.,Ltd. | Charging circuit, terminal, and charging method |
-
1980
- 1980-12-25 JP JP18880880A patent/JPS57110076A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0558339A2 (en) * | 1992-02-27 | 1993-09-01 | Texas Instruments Incorporated | Charge pump circuit |
EP0558339A3 (en) * | 1992-02-27 | 1994-04-13 | Texas Instruments Inc | |
EP0678970A2 (en) * | 1994-04-20 | 1995-10-25 | Nippon Steel Corporation | Semiconductor booster circuit |
EP0678970A3 (en) * | 1994-04-20 | 1998-03-04 | Nippon Steel Corporation | Semiconductor booster circuit |
EP1134879A1 (en) * | 1994-04-20 | 2001-09-19 | Nippon Steel Corporation | Semiconductor booster circuit |
US6603346B2 (en) | 1994-04-20 | 2003-08-05 | Nippon Steel Corporation | Semiconductor booster circuit having cascaded MOS transistors |
US7102422B1 (en) | 1994-04-20 | 2006-09-05 | Nippon Steel Corporation | Semiconductor booster circuit having cascaded MOS transistors |
JP2004242487A (en) * | 2002-12-12 | 2004-08-26 | Nec Kansai Ltd | Boosting method and booster circuit |
JP2010022119A (en) * | 2008-07-09 | 2010-01-28 | Panasonic Corp | Internal voltage generation circuit |
JP2020530748A (en) * | 2018-07-27 | 2020-10-22 | 北京小米移動軟件有限公司Beijing Xiaomi Mobile Software Co.,Ltd. | Charging circuit, terminal, and charging method |
US11264813B2 (en) | 2018-07-27 | 2022-03-01 | Beijing Xiaomi Mobile Software Co., Ltd. | Charging circuit, terminal and charging method |
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