JPS5710975A - High dielectric strength high transistor - Google Patents

High dielectric strength high transistor

Info

Publication number
JPS5710975A
JPS5710975A JP8687780A JP8687780A JPS5710975A JP S5710975 A JPS5710975 A JP S5710975A JP 8687780 A JP8687780 A JP 8687780A JP 8687780 A JP8687780 A JP 8687780A JP S5710975 A JPS5710975 A JP S5710975A
Authority
JP
Japan
Prior art keywords
region
drain
low
impurity density
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8687780A
Other languages
English (en)
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP8687780A priority Critical patent/JPS5710975A/ja
Publication of JPS5710975A publication Critical patent/JPS5710975A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
JP8687780A 1980-06-25 1980-06-25 High dielectric strength high transistor Pending JPS5710975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8687780A JPS5710975A (en) 1980-06-25 1980-06-25 High dielectric strength high transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8687780A JPS5710975A (en) 1980-06-25 1980-06-25 High dielectric strength high transistor

Publications (1)

Publication Number Publication Date
JPS5710975A true JPS5710975A (en) 1982-01-20

Family

ID=13899055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8687780A Pending JPS5710975A (en) 1980-06-25 1980-06-25 High dielectric strength high transistor

Country Status (1)

Country Link
JP (1) JPS5710975A (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169726U (ja) * 1984-10-11 1986-05-13
EP0841702A1 (en) * 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateral or vertical DMOSFET with high breakdown voltage
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568882A (en) * 1979-07-03 1981-01-29 Sharp Corp High dielectric strength field effect semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568882A (en) * 1979-07-03 1981-01-29 Sharp Corp High dielectric strength field effect semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169726U (ja) * 1984-10-11 1986-05-13
EP0841702A1 (en) * 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateral or vertical DMOSFET with high breakdown voltage
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6818490B2 (en) 2001-01-24 2004-11-16 Power Integrations, Inc. Method of fabricating complementary high-voltage field-effect transistors
US6504209B2 (en) 2001-01-24 2003-01-07 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6750105B2 (en) 2001-09-07 2004-06-15 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6787847B2 (en) 2001-09-07 2004-09-07 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6667213B2 (en) 2001-09-07 2003-12-23 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6838346B2 (en) 2001-09-07 2005-01-04 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6882005B2 (en) 2001-09-07 2005-04-19 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6987299B2 (en) 2001-09-07 2006-01-17 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Similar Documents

Publication Publication Date Title
JPS5713777A (en) Semiconductor device and manufacture thereof
JPS5710975A (en) High dielectric strength high transistor
JPS5712558A (en) Mos transistor having high withstand voltage
JPS5712557A (en) High dielectric resisting mos transistor
JPS5676574A (en) Schottky injection electrode type semiconductor device
JPS5587483A (en) Mis type semiconductor device
JPS53142189A (en) Insulating gate type field effect transistor
JPS54109785A (en) Semiconductor device
JPS5418684A (en) Manufacture of semiconductor device
JPS6433970A (en) Field effect semiconductor device
JPS57102067A (en) Manufacture of complementary type metal oxide semiconductor
JPS5698865A (en) Charge coupled device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5772386A (en) Junction type field-effect semiconductor device
JPS5544748A (en) Field-effect transistor
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS57184250A (en) Field-effect type semiconductor circuit element
JPS6461059A (en) Semiconductor device
JPS51148378A (en) Manufacturing method of insulation gate type electric field effect tra nsistor
JPS54131881A (en) Junction-type field effect transistor
JPS5750480A (en) Constant voltage diode
JPS5724564A (en) Insulated gate field effect transistor
JPS5575270A (en) Static induction transistor
JPS5367373A (en) Semiconductor device