JPS57104240A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57104240A JPS57104240A JP18148580A JP18148580A JPS57104240A JP S57104240 A JPS57104240 A JP S57104240A JP 18148580 A JP18148580 A JP 18148580A JP 18148580 A JP18148580 A JP 18148580A JP S57104240 A JPS57104240 A JP S57104240A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- shaped
- conduction type
- emitter region
- oxide films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18148580A JPS57104240A (en) | 1980-12-22 | 1980-12-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18148580A JPS57104240A (en) | 1980-12-22 | 1980-12-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57104240A true JPS57104240A (en) | 1982-06-29 |
Family
ID=16101578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18148580A Pending JPS57104240A (en) | 1980-12-22 | 1980-12-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57104240A (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5571036A (en) * | 1978-11-13 | 1980-05-28 | Motorola Inc | Method of manufacturing integrated circuit |
| JPS55105350A (en) * | 1979-02-07 | 1980-08-12 | Nec Corp | Semiconductor device |
-
1980
- 1980-12-22 JP JP18148580A patent/JPS57104240A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5571036A (en) * | 1978-11-13 | 1980-05-28 | Motorola Inc | Method of manufacturing integrated circuit |
| JPS55105350A (en) * | 1979-02-07 | 1980-08-12 | Nec Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES474421A1 (es) | Un dispositivo semiconductor de alto rendimiento. | |
| JPS6410644A (en) | Manufacture of semiconductor device | |
| JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
| GB1467754A (en) | Semiconductor arrangements | |
| JPS57104240A (en) | Semiconductor device | |
| JPS56115557A (en) | Manufacture of semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS56142661A (en) | Semiconductor integrated circuit and manufacture thereof | |
| JPS5696852A (en) | Semiconductor device | |
| GB1481184A (en) | Integrated circuits | |
| JPS5739567A (en) | Manufacture of semiconductor device | |
| JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
| JPS6425470A (en) | Manufacture of semiconductor device | |
| JPS5559765A (en) | Semiconductor integrated circuit device | |
| JPS5721860A (en) | Semiconductor device and manufacture thereof | |
| JPS57143859A (en) | Semiconductor device | |
| JPS5710964A (en) | Manufacture of semiconductor device | |
| GB1485183A (en) | Integrated circuit devices and their fabrication | |
| JPS575358A (en) | Semiconductor device and manufacture thereof | |
| JPS57198657A (en) | Semiconductor device | |
| JPS5541787A (en) | Semiconductor device | |
| JPS5740976A (en) | Semiconductor device | |
| JPS5776873A (en) | Manufacture of semiconductor device | |
| JPS6431459A (en) | Semiconductor integrated circuit device | |
| GB1528029A (en) | Integrated injection logic semiconductor device |