JPS5698864A - Semiconductor constituent element - Google Patents

Semiconductor constituent element

Info

Publication number
JPS5698864A
JPS5698864A JP14191980A JP14191980A JPS5698864A JP S5698864 A JPS5698864 A JP S5698864A JP 14191980 A JP14191980 A JP 14191980A JP 14191980 A JP14191980 A JP 14191980A JP S5698864 A JPS5698864 A JP S5698864A
Authority
JP
Japan
Prior art keywords
constituent element
semiconductor constituent
semiconductor
constituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14191980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0434312B2 (de
Inventor
Shiyurangenotsuto Hainritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of JPS5698864A publication Critical patent/JPS5698864A/ja
Publication of JPH0434312B2 publication Critical patent/JPH0434312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP14191980A 1979-10-10 1980-10-09 Semiconductor constituent element Granted JPS5698864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792941021 DE2941021C2 (de) 1979-10-10 1979-10-10 Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur

Publications (2)

Publication Number Publication Date
JPS5698864A true JPS5698864A (en) 1981-08-08
JPH0434312B2 JPH0434312B2 (de) 1992-06-05

Family

ID=6083126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14191980A Granted JPS5698864A (en) 1979-10-10 1980-10-09 Semiconductor constituent element

Country Status (3)

Country Link
JP (1) JPS5698864A (de)
DE (1) DE2941021C2 (de)
SE (1) SE456464B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251259A (ja) * 1985-08-30 1987-03-05 Fuji Electric Co Ltd Ｇｔｏサイリスタ

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3339393C2 (de) * 1983-10-29 1986-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer unterhalb einer äußeren hochdotierten Zone liegenden s-n-Zonenfolge einer Halbleiterstruktur aus Silicium
JPS60187058A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置
DE3424222A1 (de) * 1984-06-30 1986-01-09 Brown, Boveri & Cie Ag, 6800 Mannheim Abschaltbarer thyristor
DE3884652D1 (de) * 1987-04-07 1993-11-11 Bbc Brown Boveri & Cie Gate-Ausschaltthyristor und Verfahren zu dessen Herstellung.
DE19740906C1 (de) * 1997-09-17 1999-03-18 Siemens Ag Vertikales Halbleiterbauelement mit einstellbarer Emittereffizienz
DE10048165B4 (de) * 2000-09-28 2008-10-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit einer beabstandet zu einer Emitterzone angeordneten Stoppzone

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915382A (de) * 1972-03-27 1974-02-09
JPS5366384A (en) * 1976-11-26 1978-06-13 Mitsubishi Electric Corp Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2461207C3 (de) * 1974-12-23 1978-03-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915382A (de) * 1972-03-27 1974-02-09
JPS5366384A (en) * 1976-11-26 1978-06-13 Mitsubishi Electric Corp Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251259A (ja) * 1985-08-30 1987-03-05 Fuji Electric Co Ltd Ｇｔｏサイリスタ

Also Published As

Publication number Publication date
JPH0434312B2 (de) 1992-06-05
SE8006717L (sv) 1981-04-11
SE456464B (sv) 1988-10-03
DE2941021C2 (de) 1985-07-04
DE2941021A1 (de) 1981-04-23

Similar Documents

Publication Publication Date Title
JPS55118651A (en) Semiconductor device
JPS55133562A (en) Semiconductor device
JPS55117267A (en) Electron semiconductor element
JPS5637680A (en) Semiconductor device
JPS52105785A (en) Multiilayer semiconductor element
EP0023782A3 (en) Semiconductor device
JPS567466A (en) Selffalignment semiconductor device
JPS55140272A (en) Semiconductor device
IE801825L (en) Semiconductor manufacture
JPS567450A (en) Semiconductor device
JPS5648143A (en) Power semiconductor element
JPS5636161A (en) Semiconductor element
JPS567465A (en) Semiconductor device
IE801479L (en) Semiconductors
JPS5331980A (en) Semiconductor element
JPS5687395A (en) Semiconductor device
DE3071242D1 (en) Semiconductor device
JPS55162248A (en) Semiconductor device
JPS5666049A (en) Semiconductor device
GB2043343B (en) Semiconductor device
GB2061001B (en) Semiconductor device
JPS5676581A (en) Semiconductor device
DE3066946D1 (en) Semiconductor master-slice device
DE3071877D1 (en) Semiconductor device
JPS5598862A (en) Power semiconductor element