JPS5698009A - Microwave field effect transistor circuit - Google Patents

Microwave field effect transistor circuit

Info

Publication number
JPS5698009A
JPS5698009A JP16903279A JP16903279A JPS5698009A JP S5698009 A JPS5698009 A JP S5698009A JP 16903279 A JP16903279 A JP 16903279A JP 16903279 A JP16903279 A JP 16903279A JP S5698009 A JPS5698009 A JP S5698009A
Authority
JP
Japan
Prior art keywords
gate terminal
coupler
field effect
effect transistor
termination resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16903279A
Other languages
Japanese (ja)
Other versions
JPS6052606B2 (en
Inventor
Nobutoshi Fukuden
Shizuka Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16903279A priority Critical patent/JPS6052606B2/en
Publication of JPS5698009A publication Critical patent/JPS5698009A/en
Publication of JPS6052606B2 publication Critical patent/JPS6052606B2/en
Expired legal-status Critical Current

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  • Microwave Amplifiers (AREA)

Abstract

PURPOSE: To decrease the number of component parts, by securing a direct connection without any capacity between the resistive termination resistance of the 3dB coupler and the gate terminal to be connected in the parallel action of a field effect transistor.
CONSTITUTION: The gate terminal of the 1st FET5 to be connected to the input terminal 11 of the 3dB coupler 11 is connected via the bias cutting capacitor 7 and then earthed in terms of DC by the bias choke 9. On the other hand, the gate terminal of the 2nd FET6 to be connected to the resistive termination resistance 13 of the coupler 11 is connected directly to the isolation port. The termination resistance 12 is generally ≤2kΩ, which is small enough in comparison with the input impedance viewed from the gate of the FET. As a result, the earth potential can be held in terms of DC for the gate terminal.
COPYRIGHT: (C)1981,JPO&Japio
JP16903279A 1979-12-25 1979-12-25 microwave field effect transistor circuit Expired JPS6052606B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16903279A JPS6052606B2 (en) 1979-12-25 1979-12-25 microwave field effect transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16903279A JPS6052606B2 (en) 1979-12-25 1979-12-25 microwave field effect transistor circuit

Publications (2)

Publication Number Publication Date
JPS5698009A true JPS5698009A (en) 1981-08-07
JPS6052606B2 JPS6052606B2 (en) 1985-11-20

Family

ID=15879048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16903279A Expired JPS6052606B2 (en) 1979-12-25 1979-12-25 microwave field effect transistor circuit

Country Status (1)

Country Link
JP (1) JPS6052606B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2591794B1 (en) * 1985-12-13 1989-01-13 Orega Electro Mecanique HIGH VOLTAGE TRANSFORMER WITHOUT HIGH VOLTAGE OUTPUT CABLES AND WITH REMOVABLE POTENTIOMETRIC BLOCK, PARTICULARLY FOR A TRICHROME CATHODE RAY TUBE
JPH0677056A (en) * 1992-08-27 1994-03-18 Hitachi Mizusawa Electron Co Ltd Fly-back transformer

Also Published As

Publication number Publication date
JPS6052606B2 (en) 1985-11-20

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