JPS5673902A - Microwave circuit - Google Patents

Microwave circuit

Info

Publication number
JPS5673902A
JPS5673902A JP15031379A JP15031379A JPS5673902A JP S5673902 A JPS5673902 A JP S5673902A JP 15031379 A JP15031379 A JP 15031379A JP 15031379 A JP15031379 A JP 15031379A JP S5673902 A JPS5673902 A JP S5673902A
Authority
JP
Japan
Prior art keywords
resistor
bias
microwave circuit
microwave
fet11
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15031379A
Other languages
Japanese (ja)
Inventor
Nobutoshi Fukuden
Shizuka Jodai
Akira Furumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15031379A priority Critical patent/JPS5673902A/en
Publication of JPS5673902A publication Critical patent/JPS5673902A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's

Abstract

PURPOSE:To reduce the leakage of microwaves, by applying a bias voltage to an input terminal of a transistor via a resistor having a specific resistance value. CONSTITUTION:A DC bias is given to a gate of FET11 via a resistor 12. The resistor 12 has a sufficiently high impedance than the line impedance. The resistor 12 can be formed from a thin film resistor of tantalum nitride on a microwave IC. Thus, without using a choke coil and a by-pass capacitor, a bias circuit with low loss can be achieved.
JP15031379A 1979-11-20 1979-11-20 Microwave circuit Pending JPS5673902A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15031379A JPS5673902A (en) 1979-11-20 1979-11-20 Microwave circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15031379A JPS5673902A (en) 1979-11-20 1979-11-20 Microwave circuit

Publications (1)

Publication Number Publication Date
JPS5673902A true JPS5673902A (en) 1981-06-19

Family

ID=15494282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15031379A Pending JPS5673902A (en) 1979-11-20 1979-11-20 Microwave circuit

Country Status (1)

Country Link
JP (1) JPS5673902A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854116U (en) * 1981-10-07 1983-04-13 デイエツクスアンテナ株式会社 Microwave signal multiplier circuit
WO2001024307A1 (en) * 1999-09-30 2001-04-05 Nec Corporation Small-sized phase shifter and method of manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854116U (en) * 1981-10-07 1983-04-13 デイエツクスアンテナ株式会社 Microwave signal multiplier circuit
WO2001024307A1 (en) * 1999-09-30 2001-04-05 Nec Corporation Small-sized phase shifter and method of manufacture thereof

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