JPS579108A - High frequency transistor power amplifier - Google Patents

High frequency transistor power amplifier

Info

Publication number
JPS579108A
JPS579108A JP8312080A JP8312080A JPS579108A JP S579108 A JPS579108 A JP S579108A JP 8312080 A JP8312080 A JP 8312080A JP 8312080 A JP8312080 A JP 8312080A JP S579108 A JPS579108 A JP S579108A
Authority
JP
Japan
Prior art keywords
terminal
filter
frequency
amplifier
power amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8312080A
Other languages
Japanese (ja)
Other versions
JPH0147926B2 (en
Inventor
Masabumi Onda
Yoshio Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8312080A priority Critical patent/JPS579108A/en
Publication of JPS579108A publication Critical patent/JPS579108A/en
Publication of JPH0147926B2 publication Critical patent/JPH0147926B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/12—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of attenuating means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make the stability against load variance excellent, by providing mutually a series/parallel circuit for a filter having a cut-off frequency lower than the operating frequency of a high frequency transistor power amplifier and a filter terminated with a resistor. CONSTITUTION:One end of a resistor 3 is grounded and another end is connected to the input terminal of a low-pass filter 4. The output terminal of a high-pass filter 2 and that of the filter 4 are connected to the input terminal of a power amplifier 6 consisting of high frequency transistors. The filter 2 is constituted that it is at a high impedance at lower frequencies than the operating frequency of the amplifier 6 by viewing an input power terminal 1 from a terminal 5 of the amplifier 6. Further, the cut-off frequency of the filter 4 is lower than the operating frequency of the amplifier 6. Thus, at lower frequencies than the operating frequency, the resistor 3 can be existed at all time by viewing the terminal 1 from the terminal 5, even if the load condition of the prestage is fluctuated from the terminal 1.
JP8312080A 1980-06-19 1980-06-19 High frequency transistor power amplifier Granted JPS579108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8312080A JPS579108A (en) 1980-06-19 1980-06-19 High frequency transistor power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8312080A JPS579108A (en) 1980-06-19 1980-06-19 High frequency transistor power amplifier

Publications (2)

Publication Number Publication Date
JPS579108A true JPS579108A (en) 1982-01-18
JPH0147926B2 JPH0147926B2 (en) 1989-10-17

Family

ID=13793337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8312080A Granted JPS579108A (en) 1980-06-19 1980-06-19 High frequency transistor power amplifier

Country Status (1)

Country Link
JP (1) JPS579108A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162112A (en) * 1982-03-23 1983-09-26 Nec Corp Monolithic integrated circuit amplifier
CN104247258A (en) * 2013-02-26 2014-12-24 松下电器产业株式会社 Amplifier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162112A (en) * 1982-03-23 1983-09-26 Nec Corp Monolithic integrated circuit amplifier
JPH0457124B2 (en) * 1982-03-23 1992-09-10 Nippon Electric Co
CN104247258A (en) * 2013-02-26 2014-12-24 松下电器产业株式会社 Amplifier
CN104247258B (en) * 2013-02-26 2017-06-23 松下电器产业株式会社 Amplifier

Also Published As

Publication number Publication date
JPH0147926B2 (en) 1989-10-17

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