JPS5673911A - Microwave amplifier - Google Patents

Microwave amplifier

Info

Publication number
JPS5673911A
JPS5673911A JP15031279A JP15031279A JPS5673911A JP S5673911 A JPS5673911 A JP S5673911A JP 15031279 A JP15031279 A JP 15031279A JP 15031279 A JP15031279 A JP 15031279A JP S5673911 A JPS5673911 A JP S5673911A
Authority
JP
Japan
Prior art keywords
resistors
constitution
gate
input
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15031279A
Other languages
Japanese (ja)
Inventor
Nobutoshi Fukuden
Shizuka Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15031279A priority Critical patent/JPS5673911A/en
Publication of JPS5673911A publication Critical patent/JPS5673911A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make simple the constitution and to make stable the operation, by constituting the self-bias circuit with a resistor connected to a low-pass filter which is connected to a gate of EFT. CONSTITUTION:Since resistors 39, 43 are made equal to the characteristic impedance of the line, the microwaves passing through low-pass filters 41, 45 of input and output sides are terminated with nonreflection at the resistors 39 and 43. Since a voltage drop is produced across a resistor 47 through the flowing of the source current from a power supply VCC, the gate of FET37 is biased negative with the source. Input and output matching circuits 31, 34 are formed with high-pass filters capacitors 32, 35 and inductances 33, 36, respectively.
JP15031279A 1979-11-20 1979-11-20 Microwave amplifier Pending JPS5673911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15031279A JPS5673911A (en) 1979-11-20 1979-11-20 Microwave amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15031279A JPS5673911A (en) 1979-11-20 1979-11-20 Microwave amplifier

Publications (1)

Publication Number Publication Date
JPS5673911A true JPS5673911A (en) 1981-06-19

Family

ID=15494260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15031279A Pending JPS5673911A (en) 1979-11-20 1979-11-20 Microwave amplifier

Country Status (1)

Country Link
JP (1) JPS5673911A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2651936A1 (en) * 1989-09-13 1991-03-15 Mitsubishi Electric Corp FIELD EFFECT TRANSISTOR AMPLIFIER, ESPECIALLY USED IN A MICROWAVE BAND.
EP0438257A2 (en) * 1990-01-16 1991-07-24 Fujitsu Limited High frequency amplifier
US5159287A (en) * 1990-07-16 1992-10-27 Fujitsu Limited High efficiency rf power amplifier
US5229732A (en) * 1990-01-16 1993-07-20 Fujitsu Limited High frequency amplifier having stable amplification operation
JP2004328190A (en) * 2003-04-23 2004-11-18 Renesas Technology Corp High frequency power amplifier module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2651936A1 (en) * 1989-09-13 1991-03-15 Mitsubishi Electric Corp FIELD EFFECT TRANSISTOR AMPLIFIER, ESPECIALLY USED IN A MICROWAVE BAND.
US5089790A (en) * 1989-09-13 1992-02-18 Mitsubishi Denki Kabushiki Kaisha Field effect transistor amplifier
EP0438257A2 (en) * 1990-01-16 1991-07-24 Fujitsu Limited High frequency amplifier
US5229732A (en) * 1990-01-16 1993-07-20 Fujitsu Limited High frequency amplifier having stable amplification operation
US5159287A (en) * 1990-07-16 1992-10-27 Fujitsu Limited High efficiency rf power amplifier
JP2004328190A (en) * 2003-04-23 2004-11-18 Renesas Technology Corp High frequency power amplifier module

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