JPS5692524A - Photo switch - Google Patents

Photo switch

Info

Publication number
JPS5692524A
JPS5692524A JP17071379A JP17071379A JPS5692524A JP S5692524 A JPS5692524 A JP S5692524A JP 17071379 A JP17071379 A JP 17071379A JP 17071379 A JP17071379 A JP 17071379A JP S5692524 A JPS5692524 A JP S5692524A
Authority
JP
Japan
Prior art keywords
optical guide
semi
insulation
characteristic
depletion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17071379A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17071379A priority Critical patent/JPS5692524A/en
Publication of JPS5692524A publication Critical patent/JPS5692524A/en
Pending legal-status Critical Current

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  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a photoswitch of the construction permitting extremely easy mounting to a monolithic configuration photointegrated circuit by disposing plural Schottky electrodes so that the end parts of plural optical guides may be formed at the end part of one optical guide. CONSTITUTION:Now, when a change-over switch 12 is selecting an optical guide 8, the light 14 entering from the terminal of an optical guide 7 arrives at a branch 10 by propagating in the n-GaAs layer encircled by a semi-insulation characteristic GaAs substrate and the depletion layer under a Pd Schottky electrode. Here, the optical guide 8 is in the state that it can function as an optical guide because the depletion layer under the Pd schottky electrode has arrived on the surface of the semi-insulation-characteristic GaAs substrate, but the optical guide 9 does not function as an optical guide because the depletion layer under the Pd Schottky electrode has not arrived at the surface of the semi-insulation-characteristic substrate. Hence, the light having propagated in the optical guide 7 is introduced into the optical guide 8 in the branch 10 and is radiated 15 from the terminal thereof.
JP17071379A 1979-12-27 1979-12-27 Photo switch Pending JPS5692524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17071379A JPS5692524A (en) 1979-12-27 1979-12-27 Photo switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17071379A JPS5692524A (en) 1979-12-27 1979-12-27 Photo switch

Publications (1)

Publication Number Publication Date
JPS5692524A true JPS5692524A (en) 1981-07-27

Family

ID=15910009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17071379A Pending JPS5692524A (en) 1979-12-27 1979-12-27 Photo switch

Country Status (1)

Country Link
JP (1) JPS5692524A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129725A (en) * 1983-12-16 1985-07-11 Agency Of Ind Science & Technol Surface field-effect device
US4846542A (en) * 1987-10-09 1989-07-11 Oki Electric Industry Co., Ltd. Optical switch matrix

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129725A (en) * 1983-12-16 1985-07-11 Agency Of Ind Science & Technol Surface field-effect device
JPH0349411B2 (en) * 1983-12-16 1991-07-29 Kogyo Gijutsuin
US4846542A (en) * 1987-10-09 1989-07-11 Oki Electric Industry Co., Ltd. Optical switch matrix

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