JPS5691234A - Manufacture of mask for x-ray exposure - Google Patents

Manufacture of mask for x-ray exposure

Info

Publication number
JPS5691234A
JPS5691234A JP16809379A JP16809379A JPS5691234A JP S5691234 A JPS5691234 A JP S5691234A JP 16809379 A JP16809379 A JP 16809379A JP 16809379 A JP16809379 A JP 16809379A JP S5691234 A JPS5691234 A JP S5691234A
Authority
JP
Japan
Prior art keywords
layer
plated
mask
undercoat
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16809379A
Other languages
Japanese (ja)
Other versions
JPS631739B2 (en
Inventor
Fumio Yamagishi
Yuji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16809379A priority Critical patent/JPS5691234A/en
Publication of JPS5691234A publication Critical patent/JPS5691234A/en
Publication of JPS631739B2 publication Critical patent/JPS631739B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Abstract

PURPOSE:To obtain a mask with superior Au adhesion, etc. by forming a plated undercoat layer on a substrate, forming a resist pattern exposing the layer correspondingly to an X-ray absorption pattern on the layer, and plating the exposed part with Ni and Au in order. CONSTITUTION:Plated undercoat layer 2 of Cr, Ni or the like is formed on sub- strate 1 of polyimide or the like, and it is covered with resist layer 3 having plated undercoat exposed part 4 corresponding to an X-ray absorption pattern. Exposed part 4 is plated with Ni 5 and further plated with Au 6. Resist layer 3 is then removed, and undercoat layer 2 is also removed by chemical etching, gas plasma etching or other method to form X-ray absorption pattern 7. Etching mask 8 is attached to the back side of substrate 1, and window 9 is made to form pattern support layer 8. Since plated Au 6 exists on substrate 1 with undercoat layer 2 and plated Ni 5 in-between without using Au as layer 2, a mask with high adhesion and reliability is obtd.
JP16809379A 1979-12-26 1979-12-26 Manufacture of mask for x-ray exposure Granted JPS5691234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16809379A JPS5691234A (en) 1979-12-26 1979-12-26 Manufacture of mask for x-ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16809379A JPS5691234A (en) 1979-12-26 1979-12-26 Manufacture of mask for x-ray exposure

Publications (2)

Publication Number Publication Date
JPS5691234A true JPS5691234A (en) 1981-07-24
JPS631739B2 JPS631739B2 (en) 1988-01-13

Family

ID=15861707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16809379A Granted JPS5691234A (en) 1979-12-26 1979-12-26 Manufacture of mask for x-ray exposure

Country Status (1)

Country Link
JP (1) JPS5691234A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599737A (en) * 1982-09-16 1986-07-08 Hitachi, Ltd. X-ray mask with Ni pattern

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212002A (en) * 1975-06-30 1977-01-29 Ibm Method of high aspect ratio mask
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS5329574A (en) * 1976-08-31 1978-03-18 Oki Electric Ind Co Ltd Transmitting type photoelectric switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212002A (en) * 1975-06-30 1977-01-29 Ibm Method of high aspect ratio mask
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS5329574A (en) * 1976-08-31 1978-03-18 Oki Electric Ind Co Ltd Transmitting type photoelectric switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599737A (en) * 1982-09-16 1986-07-08 Hitachi, Ltd. X-ray mask with Ni pattern

Also Published As

Publication number Publication date
JPS631739B2 (en) 1988-01-13

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