JPS568847A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS568847A JPS568847A JP8378279A JP8378279A JPS568847A JP S568847 A JPS568847 A JP S568847A JP 8378279 A JP8378279 A JP 8378279A JP 8378279 A JP8378279 A JP 8378279A JP S568847 A JPS568847 A JP S568847A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electron beam
- wiring
- film
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an excellent wiring and to eliminate the threshold variation due to electron beam irradiation damage by a method wherein a wiring material layer is composed of a three layered metalic layer in which as the upper and lower layer of a heavy metal layer an Al or Al alloy layers are disposed. CONSTITUTION:On a p-type Si substrate 1 a filed oxide film 2, a gate electrode 3, a gate oxide film 4, a source 6 and a drain 7 are formed. Next after a phosphorous added glass film 10 is laminated, the film 10 is selectively removed, and contact holes 11-13 are perfolated. After this process a layer 14 made of Al or Al alloy, a heavy metal layer 15 and a layer 16 made of Al or Al alloy are applied succesively on them. Next after an electron beam sensitive resist film is applied on the layer 16, a resist film pattern 17 is formed by irradiation of electron beam. Next by utilizing the pattern 17 as a mask, layers 16, 15, 14 are etched succesively, and a three layered wiring which is composed of layers 14-16 is formed. By this constitution a wiring layer which can build ohmic contact with the substrate 1 and has good bonding characteristic with an external terminal and prevents devices from electron beam irradiation damage can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8378279A JPS568847A (en) | 1979-07-02 | 1979-07-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8378279A JPS568847A (en) | 1979-07-02 | 1979-07-02 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS568847A true JPS568847A (en) | 1981-01-29 |
Family
ID=13812190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8378279A Pending JPS568847A (en) | 1979-07-02 | 1979-07-02 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS568847A (en) |
-
1979
- 1979-07-02 JP JP8378279A patent/JPS568847A/en active Pending
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