JPS5683973A - Manufacture of mos type transistor - Google Patents

Manufacture of mos type transistor

Info

Publication number
JPS5683973A
JPS5683973A JP16102979A JP16102979A JPS5683973A JP S5683973 A JPS5683973 A JP S5683973A JP 16102979 A JP16102979 A JP 16102979A JP 16102979 A JP16102979 A JP 16102979A JP S5683973 A JPS5683973 A JP S5683973A
Authority
JP
Japan
Prior art keywords
film
type
layer
region
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16102979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159672B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16102979A priority Critical patent/JPS5683973A/ja
Publication of JPS5683973A publication Critical patent/JPS5683973A/ja
Publication of JPS6159672B2 publication Critical patent/JPS6159672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP16102979A 1979-12-12 1979-12-12 Manufacture of mos type transistor Granted JPS5683973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16102979A JPS5683973A (en) 1979-12-12 1979-12-12 Manufacture of mos type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16102979A JPS5683973A (en) 1979-12-12 1979-12-12 Manufacture of mos type transistor

Publications (2)

Publication Number Publication Date
JPS5683973A true JPS5683973A (en) 1981-07-08
JPS6159672B2 JPS6159672B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=15727234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16102979A Granted JPS5683973A (en) 1979-12-12 1979-12-12 Manufacture of mos type transistor

Country Status (1)

Country Link
JP (1) JPS5683973A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089972A (ja) * 1983-10-24 1985-05-20 Nec Corp Ｍｉｓ型半導体装置
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof
US5508541A (en) * 1992-09-22 1996-04-16 Kabushiki Kaisha Toshiba Random access memory device with trench-type one-transistor memory cell structure
US6479846B2 (en) 2000-03-22 2002-11-12 Ophir Rf, Inc. Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity
JP2014072235A (ja) * 2012-09-27 2014-04-21 Seiko Instruments Inc 半導体集積回路装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089972A (ja) * 1983-10-24 1985-05-20 Nec Corp Ｍｉｓ型半導体装置
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof
US5508541A (en) * 1992-09-22 1996-04-16 Kabushiki Kaisha Toshiba Random access memory device with trench-type one-transistor memory cell structure
US5736760A (en) * 1992-09-22 1998-04-07 Kabushiki Kaisha Toshiba Random access memory device with trench-type one-transistor memory cell structure
US6479846B2 (en) 2000-03-22 2002-11-12 Ophir Rf, Inc. Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity
JP2014072235A (ja) * 2012-09-27 2014-04-21 Seiko Instruments Inc 半導体集積回路装置

Also Published As

Publication number Publication date
JPS6159672B2 (enrdf_load_stackoverflow) 1986-12-17

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