JPS5680131A - Method and device for ion beam etching - Google Patents

Method and device for ion beam etching

Info

Publication number
JPS5680131A
JPS5680131A JP15769579A JP15769579A JPS5680131A JP S5680131 A JPS5680131 A JP S5680131A JP 15769579 A JP15769579 A JP 15769579A JP 15769579 A JP15769579 A JP 15769579A JP S5680131 A JPS5680131 A JP S5680131A
Authority
JP
Japan
Prior art keywords
sample
organic layer
oxygen ion
pattern
converged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15769579A
Other languages
English (en)
Inventor
Sotaro Edokoro
Hiroshi Gokan
Masaki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15769579A priority Critical patent/JPS5680131A/ja
Publication of JPS5680131A publication Critical patent/JPS5680131A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
JP15769579A 1979-12-05 1979-12-05 Method and device for ion beam etching Pending JPS5680131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15769579A JPS5680131A (en) 1979-12-05 1979-12-05 Method and device for ion beam etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15769579A JPS5680131A (en) 1979-12-05 1979-12-05 Method and device for ion beam etching

Publications (1)

Publication Number Publication Date
JPS5680131A true JPS5680131A (en) 1981-07-01

Family

ID=15655356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15769579A Pending JPS5680131A (en) 1979-12-05 1979-12-05 Method and device for ion beam etching

Country Status (1)

Country Link
JP (1) JPS5680131A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718324A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Method of working
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPS60136315A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd マイクロイオンビ−ム加工方法およびその装置
JPS61174630A (ja) * 1985-01-29 1986-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63170940A (ja) * 1987-12-02 1988-07-14 Hitachi Ltd Ｉｃ素子の修正方法
JPS63296241A (ja) * 1987-12-02 1988-12-02 Hitachi Ltd Ｉｃ素子の加工装置
JPH06283534A (ja) * 1993-03-26 1994-10-07 Hitachi Ltd Ｉｃ素子における配線接続装置
JPH06295910A (ja) * 1993-03-26 1994-10-21 Hitachi Ltd Ｉｃ素子およびｉｃ素子における配線接続方法
JPH06302603A (ja) * 1993-03-26 1994-10-28 Hitachi Ltd Ｉｃ素子

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718324A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Method of working
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPH0514416B2 (ja) * 1983-03-16 1993-02-25 Hitachi Ltd
JPS60136315A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd マイクロイオンビ−ム加工方法およびその装置
JPH0510822B2 (ja) * 1983-12-26 1993-02-10 Hitachi Ltd
JPS61174630A (ja) * 1985-01-29 1986-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63170940A (ja) * 1987-12-02 1988-07-14 Hitachi Ltd Ｉｃ素子の修正方法
JPS63296241A (ja) * 1987-12-02 1988-12-02 Hitachi Ltd Ｉｃ素子の加工装置
JPH06283534A (ja) * 1993-03-26 1994-10-07 Hitachi Ltd Ｉｃ素子における配線接続装置
JPH06295910A (ja) * 1993-03-26 1994-10-21 Hitachi Ltd Ｉｃ素子およびｉｃ素子における配線接続方法
JPH06302603A (ja) * 1993-03-26 1994-10-28 Hitachi Ltd Ｉｃ素子

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