JPS567438A - Annealing device for semiconductor which use laser - Google Patents
Annealing device for semiconductor which use laserInfo
- Publication number
- JPS567438A JPS567438A JP8284879A JP8284879A JPS567438A JP S567438 A JPS567438 A JP S567438A JP 8284879 A JP8284879 A JP 8284879A JP 8284879 A JP8284879 A JP 8284879A JP S567438 A JPS567438 A JP S567438A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- wafer
- mirror
- base
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8284879A JPS567438A (en) | 1979-06-28 | 1979-06-28 | Annealing device for semiconductor which use laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8284879A JPS567438A (en) | 1979-06-28 | 1979-06-28 | Annealing device for semiconductor which use laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS567438A true JPS567438A (en) | 1981-01-26 |
JPS6227532B2 JPS6227532B2 (ja) | 1987-06-15 |
Family
ID=13785792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8284879A Granted JPS567438A (en) | 1979-06-28 | 1979-06-28 | Annealing device for semiconductor which use laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS567438A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62259437A (ja) * | 1986-05-02 | 1987-11-11 | Asahi Glass Co Ltd | レ−ザ−アニ−ル装置 |
KR100278977B1 (ko) * | 1997-08-30 | 2001-02-01 | 구본준 | 레이저 장비 |
US8314360B2 (en) * | 2005-09-26 | 2012-11-20 | Ultratech, Inc. | Apparatuses and methods for irradiating a substrate to avoid substrate edge damage |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012084620A (ja) * | 2010-10-08 | 2012-04-26 | Mitsubishi Electric Corp | レーザ加工装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5437472A (en) * | 1977-08-29 | 1979-03-19 | Hitachi Ltd | Manufacture of semiconductor |
-
1979
- 1979-06-28 JP JP8284879A patent/JPS567438A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5437472A (en) * | 1977-08-29 | 1979-03-19 | Hitachi Ltd | Manufacture of semiconductor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62259437A (ja) * | 1986-05-02 | 1987-11-11 | Asahi Glass Co Ltd | レ−ザ−アニ−ル装置 |
KR100278977B1 (ko) * | 1997-08-30 | 2001-02-01 | 구본준 | 레이저 장비 |
US8314360B2 (en) * | 2005-09-26 | 2012-11-20 | Ultratech, Inc. | Apparatuses and methods for irradiating a substrate to avoid substrate edge damage |
Also Published As
Publication number | Publication date |
---|---|
JPS6227532B2 (ja) | 1987-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52115681A (en) | Method of improving crystallinity of semiconductor coating by scanning laser beam | |
KR960007083A (ko) | 엑시머 레이저빔 조사장치 | |
GB1333087A (en) | Optical arrangements and apparatus | |
US2149487A (en) | Half-tone engraving and apparatus for and method of making the same | |
JPS567438A (en) | Annealing device for semiconductor which use laser | |
JPS6449202A (en) | Curved electric component and method of its laser trimming | |
JPS53114347A (en) | Working method for semiconductor device | |
JPS5780030A (en) | Manufacture of plastic bottle | |
JPS6176260A (ja) | 研摩方法 | |
JPS56119687A (en) | Method for working of cold rolling surface | |
JPS5651528A (en) | Method of improving iron loss value of magnetic steel sheet and its device | |
JPS57179704A (en) | Method and device for measuring length | |
JPS5716309A (en) | Displacement detector | |
JPS5650521A (en) | Annealing device for semiconductor wafer using laser beam | |
JPS5750428A (en) | Method and apparatus for manufacturing semiconductor device | |
JPH0590191A (ja) | パルスレーザアニール装置 | |
ATE27659T1 (de) | Verfahren zum feststellen von referenzdaten zum zwecke der korrektur von mechanischen bewegungen beim schreiben von linien mit einem schreiblaserstrahl in einem metallisierten raster und vorrichtung zur durchfuehrung des verfahrens. | |
RU94020443A (ru) | Способ лазерного гравирования и устройство его реализующее | |
JPS5455896A (en) | Scanning method of machining razor beam | |
JPS57142785A (en) | Automatic marking device | |
JPS646859A (en) | Ultrasonic probe | |
JPS5440732A (en) | Method of manufacturing card | |
JPS57158666A (en) | Image forming device | |
JPS60149725A (ja) | レ−ザ焼入れ方法 | |
JPS57203904A (en) | Optical dimension measurement and its device |