JPS5673428A - Method of forming film - Google Patents
Method of forming filmInfo
- Publication number
- JPS5673428A JPS5673428A JP15085579A JP15085579A JPS5673428A JP S5673428 A JPS5673428 A JP S5673428A JP 15085579 A JP15085579 A JP 15085579A JP 15085579 A JP15085579 A JP 15085579A JP S5673428 A JPS5673428 A JP S5673428A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- magnetic field
- distribution
- field strength
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15085579A JPS5673428A (en) | 1979-11-21 | 1979-11-21 | Method of forming film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15085579A JPS5673428A (en) | 1979-11-21 | 1979-11-21 | Method of forming film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5673428A true JPS5673428A (en) | 1981-06-18 |
| JPH0127569B2 JPH0127569B2 (enExample) | 1989-05-30 |
Family
ID=15505837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15085579A Granted JPS5673428A (en) | 1979-11-21 | 1979-11-21 | Method of forming film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673428A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5970333U (ja) * | 1982-10-29 | 1984-05-12 | 株式会社日立国際電気 | プラズマ化学気相生成装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5046074A (enExample) * | 1973-08-28 | 1975-04-24 |
-
1979
- 1979-11-21 JP JP15085579A patent/JPS5673428A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5046074A (enExample) * | 1973-08-28 | 1975-04-24 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5970333U (ja) * | 1982-10-29 | 1984-05-12 | 株式会社日立国際電気 | プラズマ化学気相生成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0127569B2 (enExample) | 1989-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6417870A (en) | Manufacture of carbon | |
| EP0099725A3 (en) | High pressure, non-local thermal equilibrium arc plasma generating apparatus for deposition of coatings upon substrates | |
| JPS56121629A (en) | Film forming method | |
| JPS6451396A (en) | Device for forming thin diamond film | |
| JPS5511127A (en) | Forming method for oxidation film | |
| JPS6456869A (en) | Thin film forming device | |
| JPS577129A (en) | Treating method and device for sputtering | |
| JPS55101853A (en) | Method of fabricating comparison electrode with fet | |
| JPS5721813A (en) | Forming method for film | |
| JPS6418991A (en) | Formation of diamond thin film | |
| JPS5562160A (en) | Forming method for film by glow discharge | |
| JPS5688315A (en) | Apparatus for gaseous phase growth | |
| JPS64271A (en) | Microwave plasma cvd device | |
| JPS5523085A (en) | Production of silicon film | |
| JPS5689835A (en) | Vapor phase growth apparatus | |
| JPS649890A (en) | Apparatus for molecular beam growth | |
| JPS6447028A (en) | Plasma device | |
| JPS6418224A (en) | Semiconductor manufacture equipment | |
| JPS55134767A (en) | Electronic impulse type ion engine | |
| JPS63192229A (ja) | プラズマプロセス装置 | |
| JPS5615838A (en) | Gaseous phase growth device | |
| JPS6481213A (en) | Plasma process apparatus | |
| JPS63475A (ja) | ハイブリツドイオンプレ−テイング装置 | |
| JP2934465B2 (ja) | プラズマｃｖｄ装置 | |
| JPS64270A (en) | Microwave plasma cvd device |