JPS6456870A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6456870A
JPS6456870A JP21490087A JP21490087A JPS6456870A JP S6456870 A JPS6456870 A JP S6456870A JP 21490087 A JP21490087 A JP 21490087A JP 21490087 A JP21490087 A JP 21490087A JP S6456870 A JPS6456870 A JP S6456870A
Authority
JP
Japan
Prior art keywords
waveguide
thin film
microwave
chamber
formation chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21490087A
Other languages
Japanese (ja)
Inventor
Shigeto Matsuoka
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP21490087A priority Critical patent/JPS6456870A/en
Priority to EP87906208A priority patent/EP0283519B1/en
Priority to PCT/JP1987/000695 priority patent/WO1988002546A1/en
Priority to DE3789618T priority patent/DE3789618T2/en
Priority to US07/198,500 priority patent/US5022977A/en
Publication of JPS6456870A publication Critical patent/JPS6456870A/en
Pending legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a good-quality thin film at high velocity with high efficiency by successively providing the waveguide of microwave, a vacuum waveguide, a plasma formation chamber and a sample chamber under specified conditions and constituting a thin film forming device. CONSTITUTION:A vacuum chamber 4 consists of a vacuum waveguide 10, a plasma formation chamber 11, the end part 16 thereof and a sample chamber 9 and the waveguide 10 is made to an L-shape and connected with the waveguide 7 of microwave via a window 6 and both a yoke 12 made of magnetic soft iron for absorbing a magnetic flux and electromagnets 8 for generating a magnetic field are provided around the waveguide 10. Further the formation chamber 11 has diameter and length for forming a microwave cavity resonator in which microwave is resonated and the electromagnets 8 more than a pair are provided to the outer peripheral both ends and a mirror field is formed so that magnetic flux density is made extremely small. Furthermore a cylindrical target 13 for impressing negative voltage is provided to the inner wall of the formation chamber 11 and ring-shaped permanent magnets 14 more than a pair having reversed polarities are provided to the outsides of the upper and lower both ends of the target 13 and a magnetic flux is leaked to the inside surface of the target 13 and a substrate 2 is placed on a base plate holder of the sample chamber 9. Thereby a high-purity thin film having good quality is formed on the low-temp. substrate 2.
JP21490087A 1986-09-29 1987-08-28 Thin film forming device Pending JPS6456870A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP21490087A JPS6456870A (en) 1987-08-28 1987-08-28 Thin film forming device
EP87906208A EP0283519B1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
PCT/JP1987/000695 WO1988002546A1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
DE3789618T DE3789618T2 (en) 1986-09-29 1987-09-24 ION GENERATING APPARATUS, THIN FILM FORMING DEVICE USING THE ION GENERATING APPARATUS AND ION SOURCE.
US07/198,500 US5022977A (en) 1986-09-29 1987-09-24 Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21490087A JPS6456870A (en) 1987-08-28 1987-08-28 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6456870A true JPS6456870A (en) 1989-03-03

Family

ID=16663422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21490087A Pending JPS6456870A (en) 1986-09-29 1987-08-28 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6456870A (en)

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