JPS6456870A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPS6456870A JPS6456870A JP21490087A JP21490087A JPS6456870A JP S6456870 A JPS6456870 A JP S6456870A JP 21490087 A JP21490087 A JP 21490087A JP 21490087 A JP21490087 A JP 21490087A JP S6456870 A JPS6456870 A JP S6456870A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- thin film
- microwave
- chamber
- formation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a good-quality thin film at high velocity with high efficiency by successively providing the waveguide of microwave, a vacuum waveguide, a plasma formation chamber and a sample chamber under specified conditions and constituting a thin film forming device. CONSTITUTION:A vacuum chamber 4 consists of a vacuum waveguide 10, a plasma formation chamber 11, the end part 16 thereof and a sample chamber 9 and the waveguide 10 is made to an L-shape and connected with the waveguide 7 of microwave via a window 6 and both a yoke 12 made of magnetic soft iron for absorbing a magnetic flux and electromagnets 8 for generating a magnetic field are provided around the waveguide 10. Further the formation chamber 11 has diameter and length for forming a microwave cavity resonator in which microwave is resonated and the electromagnets 8 more than a pair are provided to the outer peripheral both ends and a mirror field is formed so that magnetic flux density is made extremely small. Furthermore a cylindrical target 13 for impressing negative voltage is provided to the inner wall of the formation chamber 11 and ring-shaped permanent magnets 14 more than a pair having reversed polarities are provided to the outsides of the upper and lower both ends of the target 13 and a magnetic flux is leaked to the inside surface of the target 13 and a substrate 2 is placed on a base plate holder of the sample chamber 9. Thereby a high-purity thin film having good quality is formed on the low-temp. substrate 2.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21490087A JPS6456870A (en) | 1987-08-28 | 1987-08-28 | Thin film forming device |
EP87906208A EP0283519B1 (en) | 1986-09-29 | 1987-09-24 | Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source |
PCT/JP1987/000695 WO1988002546A1 (en) | 1986-09-29 | 1987-09-24 | Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source |
DE3789618T DE3789618T2 (en) | 1986-09-29 | 1987-09-24 | ION GENERATING APPARATUS, THIN FILM FORMING DEVICE USING THE ION GENERATING APPARATUS AND ION SOURCE. |
US07/198,500 US5022977A (en) | 1986-09-29 | 1987-09-24 | Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21490087A JPS6456870A (en) | 1987-08-28 | 1987-08-28 | Thin film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6456870A true JPS6456870A (en) | 1989-03-03 |
Family
ID=16663422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21490087A Pending JPS6456870A (en) | 1986-09-29 | 1987-08-28 | Thin film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6456870A (en) |
-
1987
- 1987-08-28 JP JP21490087A patent/JPS6456870A/en active Pending
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