JPS6452063A - Ionic source - Google Patents

Ionic source

Info

Publication number
JPS6452063A
JPS6452063A JP20800487A JP20800487A JPS6452063A JP S6452063 A JPS6452063 A JP S6452063A JP 20800487 A JP20800487 A JP 20800487A JP 20800487 A JP20800487 A JP 20800487A JP S6452063 A JPS6452063 A JP S6452063A
Authority
JP
Japan
Prior art keywords
formation chamber
plasma formation
ions
magnetic field
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20800487A
Other languages
Japanese (ja)
Inventor
Shigeto Matsuoka
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP20800487A priority Critical patent/JPS6452063A/en
Priority to EP87906208A priority patent/EP0283519B1/en
Priority to US07/198,500 priority patent/US5022977A/en
Priority to PCT/JP1987/000695 priority patent/WO1988002546A1/en
Priority to DE3789618T priority patent/DE3789618T2/en
Publication of JPS6452063A publication Critical patent/JPS6452063A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To stably form metallic ions in a long time by providing a means for forming a mirror field to a plasma formation chamber, also forming a yoke to the outer periphery of a vacuum waveguide, furthermore allowing a magnetic flux to be leaked on the inside surface of a target and providing a means for selectively pulling out ions. CONSTITUTION:An electromagnetic 8 is arranged around a vacuum waveguide 10 of a plasma formation chamber 11 constituting an ionic source to form the trough of a magnetic field and also a yoke 12 made of soft magnetic iron which surrounds the electromagnet 8 is arranged to reduce intensity of the magnetic field in the vacuum waveguide 10. Electromagnets 8 more than a pair are circularly provided to the end part of the plasma formation chamber and intensity of the generating magnetic field is decided so that the trough is formed in the plasma formation chamber 11. At least a pair of ring-shaped permanent magnets 15 in which polarities are reversed are provided to the outsides of upper and lower both ends of a cylindrical target 13 and a magnetic flux is allowed to be leaked on the inside surface of the target 13. Further a mechanism 14 for pulling out ions which consists of two sheets of perforated grids is provided to the end part of the plasma formation chamber 11. Thereby high-purity ions can be selectively taken out in the electrode.
JP20800487A 1986-09-29 1987-08-21 Ionic source Pending JPS6452063A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP20800487A JPS6452063A (en) 1987-08-21 1987-08-21 Ionic source
EP87906208A EP0283519B1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
US07/198,500 US5022977A (en) 1986-09-29 1987-09-24 Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus
PCT/JP1987/000695 WO1988002546A1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
DE3789618T DE3789618T2 (en) 1986-09-29 1987-09-24 ION GENERATING APPARATUS, THIN FILM FORMING DEVICE USING THE ION GENERATING APPARATUS AND ION SOURCE.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20800487A JPS6452063A (en) 1987-08-21 1987-08-21 Ionic source

Publications (1)

Publication Number Publication Date
JPS6452063A true JPS6452063A (en) 1989-02-28

Family

ID=16549076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20800487A Pending JPS6452063A (en) 1986-09-29 1987-08-21 Ionic source

Country Status (1)

Country Link
JP (1) JPS6452063A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0995779A (en) * 1995-08-14 1997-04-08 Lg Semicon Co Ltd Sputtering apparatus using charged particle and method for sputtering vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0995779A (en) * 1995-08-14 1997-04-08 Lg Semicon Co Ltd Sputtering apparatus using charged particle and method for sputtering vapor deposition

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