JPS5697952A - Microwave ion source - Google Patents

Microwave ion source

Info

Publication number
JPS5697952A
JPS5697952A JP17728880A JP17728880A JPS5697952A JP S5697952 A JPS5697952 A JP S5697952A JP 17728880 A JP17728880 A JP 17728880A JP 17728880 A JP17728880 A JP 17728880A JP S5697952 A JPS5697952 A JP S5697952A
Authority
JP
Japan
Prior art keywords
magnetic
microwave
discharge
ion source
solenoid coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17728880A
Other languages
Japanese (ja)
Other versions
JPS5916703B2 (en
Inventor
Kuniyuki Sakumichi
Katsumi Tokikuchi
Hideki Koike
Ichiro Shikamata
Fumihiko Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17728880A priority Critical patent/JPS5916703B2/en
Publication of JPS5697952A publication Critical patent/JPS5697952A/en
Publication of JPS5916703B2 publication Critical patent/JPS5916703B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To produce a magnetic field having a required shape as well as a required strength within a discharge room, by providing an electric magnet on the low- voltage side and a high-magnetic-permiability material on the waveguide side of a drawer-type electrode system. CONSTITUTION:A solenoid coil 25 as a microwave ion source is placed on a low voltage side 24. For the purpose of forming a magnetic field which has a shape and a strength that are required for the microwave discharge within a discharge area 20, while the magnetic-flux density of a magnetic force line 21 which is produced by the solenoid coil 25 being increased, a magnetic substance 12 such as pure iron which has a high magnetic permeability should be placed on the waveguide side relative to the discharge area 20, from which a microwave 26 proceeds. The material 12 having a high magnetic permeability is prefered to be shaped and be placed, so that the proceeding of the microwave 26 is not obstructed.
JP17728880A 1980-12-17 1980-12-17 microwave ion source Expired JPS5916703B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17728880A JPS5916703B2 (en) 1980-12-17 1980-12-17 microwave ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17728880A JPS5916703B2 (en) 1980-12-17 1980-12-17 microwave ion source

Publications (2)

Publication Number Publication Date
JPS5697952A true JPS5697952A (en) 1981-08-07
JPS5916703B2 JPS5916703B2 (en) 1984-04-17

Family

ID=16028398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17728880A Expired JPS5916703B2 (en) 1980-12-17 1980-12-17 microwave ion source

Country Status (1)

Country Link
JP (1) JPS5916703B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Also Published As

Publication number Publication date
JPS5916703B2 (en) 1984-04-17

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