JPS6486515A - Device for forming film - Google Patents

Abstract

PURPOSE:To increase a film formation rate and improve uniformity of film quality in a substrate surface by removing the intensity gradient of a magnetic field in the vicinity of a substrate and making the density, progressive direction and energy of electrons and ions reaching the substrate uniform extending over the whole surface on the substrate. CONSTITUTION:The insides of a plasma generating chamber 1 and a film depositing chamber 2 are evacuated, and O2 gas is introduced as a gas for forming plasma from a gas introducing port 3. A magnet coil 0 installed around the plasma generating chamber is conducted, and a magnetic field is applied while microwave power is applied, thus generating the high-density plasma of oxygen. Plasma generated is drawn out by a divergent magnetic field and reaches a semiconductor substrate 6, but a magnetic field gradient near the substrate is removed when a magnet coil 13 mounted around the film depositing chamber is conducted, thus preventing the spread of plasma near the substrate 6. Accordingly, when the intensity gradient of a magnetic field near the substrate is eliminated, a film formation rate and uniformity in the surface of film quality are enhanced remarkably, and the film formation rate is also increased.