JPH01149958A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPH01149958A JPH01149958A JP62307861A JP30786187A JPH01149958A JP H01149958 A JPH01149958 A JP H01149958A JP 62307861 A JP62307861 A JP 62307861A JP 30786187 A JP30786187 A JP 30786187A JP H01149958 A JPH01149958 A JP H01149958A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- target
- substrate
- magnetic field
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 abstract description 21
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、スパッタ装置に間するもので、とくに高周波
と磁場を用いたスパッタ装置に間するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to sputtering equipment, and particularly to sputtering equipment using high frequency waves and a magnetic field.
従来の技術
従来、高周波と磁場を用いて高電離のプラズマを形成し
、プラズマ中のイオンに電界を加えて、ターゲットに高
速のイオンを照射してスパッタリングを起こして薄膜形
成をおこさせることは、よく知られている。［シーヤハ
０ン シ゛ヤーナｎｔ）゛ Ｙフ０ライピフィシ゛ツク
ス （ＪＡＰＡＮ ＪＯＵＮＡＬ ＯＦ ＡＰＰ
ＬＩＩＥＤ ＰＨＹＳＩＣ５’）Ｖｏｌ、２３． Ｎ
ｏ、８． ＡＵＧＵＳＴ、１９８４． ｐｐ、Ｌ５３４
−Ｌ５３６．特開昭６０−５０１６７号公報］号公報側
のひとつとして、第２図に装置の概略図を示す。基本構
成としては、プラズマを発生させるプラズマ室１１と基
板３上に薄膜を形成する膜形成室１２とプラズマ室１１
よりプラズマを引き出す引出し窓１３と引出し窓１３の
外にターゲット１４より構成される。高周波（ここでは
マイクロ波を用い、以下マイクロ波と記す。）とプラズ
マ室１１の外周に配置されたコイル５によって発生した
電子サイクロトロン共鳴（ＥＣＲ）条件の磁場（マイク
ロ波の周波数ｆ＝２．４５Ｃ；Ｈｚの場合、ＥＣＲ条件
の磁場ＢＯ＝０．０８７５Ｔ）をプラズマ室１１に印加
して、ＥＣＲプラズマ１５を形成する。このＥＣＲプラ
ズマの流れ６は、引出し窓１３を通して、膜形成室１２
に流れ出す。流れ出す途中で、プラズマに対して負電位
にしたターゲラ）１４にプラズマ中のイオンの一部が照
射されて、スパッタリング現象をおこす。ここでターゲ
ット１４は、直円筒状またはプラズマの流れ６に沿って
広がる円錐状のものを配置している。そして、スパッタ
リングされたターゲットの物質は、プラズマ中に入って
、イオン化されながら、プラズマと一緒に基板３上に到
達する。その結果ターゲットの物質またはプラズマ中で
反応合成された化合物が、基板３上に形成される。この
ような構成で、基板３上に酸化アルミニウム膜を形成す
ると、高速で緻密な膜を得ることができる。Conventional technology Conventionally, a highly ionized plasma is formed using radio frequency waves and a magnetic field, an electric field is applied to the ions in the plasma, and a target is irradiated with high-speed ions to cause sputtering and thin film formation. well known. [Seiyaha0n Syannat) Y fly physics (JAPAN JOUNAL OF APP
LIIED PHYSIC5') Vol, 23. N
o, 8. AUGUST, 1984. pp, L534
-L536. FIG. 2 shows a schematic diagram of the device as disclosed in Japanese Patent Application Laid-Open No. 60-50167. The basic configuration includes a plasma chamber 11 for generating plasma, a film forming chamber 12 for forming a thin film on a substrate 3, and a plasma chamber 11 for forming a thin film on a substrate 3.
It consists of a drawer window 13 for drawing out more plasma and a target 14 outside the drawer window 13. A magnetic field (microwave frequency f = 2.45C) under electron cyclotron resonance (ECR) conditions generated by a high frequency (microwave is used here, hereinafter referred to as microwave) and a coil 5 placed around the outer periphery of the plasma chamber 11. ; In the case of Hz, a magnetic field BO=0.0875T under ECR conditions is applied to the plasma chamber 11 to form an ECR plasma 15. This ECR plasma flow 6 passes through the drawer window 13 into the film forming chamber 12.
It flows out. During the flow, some of the ions in the plasma are irradiated onto the target layer (14), which has a negative potential with respect to the plasma, causing a sputtering phenomenon. Here, the target 14 has a right cylindrical shape or a conical shape that spreads along the plasma flow 6. Then, the sputtered target material enters the plasma and reaches the substrate 3 together with the plasma while being ionized. As a result, a target substance or a compound reaction-synthesized in the plasma is formed on the substrate 3. When an aluminum oxide film is formed on the substrate 3 with such a configuration, a dense film can be obtained at high speed.
発明が解決し書うとする問題点
しかしながら、Ｌ記のような構成では、マイクロ波と磁
場によって形成された高電離のプラズマの一部のイオン
のみを、ターゲットのスパッタとして使うので、堆積速
度は、低く抑えられてしまうという問題点があった。
さらに、プラズマ中のスパッタに寄与しない多くのイ
オンは、直接基板３上に照射されるため、基板表面およ
び形成された膜にダメージを与え、膜質の劣化を生じさ
せてしまう問題点があった。Problems to be Solved and Written by the Invention However, in the configuration as described in L, only some ions of the highly ionized plasma formed by microwaves and a magnetic field are used as target sputtering, so the deposition rate is The problem was that it was kept low.
Furthermore, since many ions in the plasma that do not contribute to sputtering are directly irradiated onto the substrate 3, there is a problem in that they damage the substrate surface and the formed film, causing deterioration of the film quality.
本発明は、かかる問題点に鑑み、高速堆積でかつ良質な
膜形成を可能にするスパッタ装置を提供することを目的
としている。SUMMARY OF THE INVENTION In view of these problems, an object of the present invention is to provide a sputtering apparatus that enables high-speed deposition and high-quality film formation.
問題点を解決するための手段
本発明は、真空槽内に高周波と磁場を印加し、前記高周
波と前記磁場によってプラズマを形成し、前記プラズマ
の流れの方向に対して傾けた少なくとも一つのターゲッ
トを配置したスパッタ装置である。さらに望ましくは、
前記プラズマに直接ふれない位置に基板を配置したスパ
ッタ装置である。Means for Solving the Problems The present invention applies a high frequency wave and a magnetic field in a vacuum chamber, forms a plasma by the high frequency wave and the magnetic field, and sets at least one target tilted with respect to the flow direction of the plasma. This is the sputtering equipment installed. More preferably,
This is a sputtering apparatus in which the substrate is placed in a position where it does not come into direct contact with the plasma.
作用
本発明は、上記の構成のように高周波と磁場を印加して
プラズマを形成し、このプラズマの流れの方向に対して
傾けた少なくとも一つのターゲットに、プラズマ中のイ
オンを照射し、スパッタリング現象を発生させ、プラズ
マに直接ふれないに配置した基板上に薄膜形成を行うも
のである。Function The present invention forms plasma by applying high frequency waves and a magnetic field as described above, and irradiates ions in the plasma to at least one target tilted with respect to the direction of flow of the plasma, thereby producing a sputtering phenomenon. This method generates plasma and forms a thin film on a substrate that is placed so as not to come into direct contact with the plasma.
高周波と磁場を印加すると、高電離のプラズマが発生す
る。このプラズマは、イオンと電子の移動度の違い（い
わゆる両極性拡散）による内部電界方向と、磁場の印加
方向の和の方向に流れ出す。When high frequency waves and magnetic fields are applied, highly ionized plasma is generated. This plasma flows out in the direction of the sum of the direction of the internal electric field due to the difference in mobility between ions and electrons (so-called ambipolar diffusion) and the direction of application of the magnetic field.
このプラズマの流れの方向に対して傾けたターゲットを
配置することは、はぼ平行に配置したものより、プラズ
マの流れに対しての断面積を増加させる。その結果プラ
ズマ中のイオンを多量にターゲット上に照射できるので
、堆積速度を増加させることができる。Arranging the target at an angle with respect to the direction of the plasma flow increases the cross-sectional area with respect to the plasma flow than when the target is arranged approximately parallel to the direction of the plasma flow. As a result, a large amount of ions in the plasma can be irradiated onto the target, making it possible to increase the deposition rate.
またプラズマに直接ふれるに基板を配置すると、多量の
イオンが基板に注入され、その結果基板上に形成された
膜質の劣化を生じた。基板をプラズマに直接ふれない位
置に配置することにより、膜質の劣化を避けることがで
きる。Furthermore, when the substrate is placed in direct contact with plasma, a large amount of ions are implanted into the substrate, resulting in deterioration of the quality of the film formed on the substrate. Deterioration of film quality can be avoided by placing the substrate in a position where it does not come into direct contact with plasma.
実施例
以下図面に基づき、本発明の一実施例を第１図について
説明する。第１図は本発明の一実施例の装置概略図であ
る。１は真空槽、２はターゲット、３は基板、５はコイ
ルである。EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG. 1 based on the drawings. FIG. 1 is a schematic diagram of an apparatus according to an embodiment of the present invention. 1 is a vacuum chamber, 2 is a target, 3 is a substrate, and 5 is a coil.
以下、高周波としてマイクロ波（ｆ＝２． ４５ＧＨｚ
）を用いる。Hereinafter, microwaves (f = 2.45 GHz) will be used as high frequencies.
) is used.
真空槽ｌは、マイクロ波の方形導波管を用い、縦５．４
６１ｃｍ、横１０．９２２ｃｔｎ（ＷＲＪ−２）であり
、長さ１４７．８６５ｃｍであった。The vacuum chamber l uses a rectangular microwave waveguide and has a length of 5.4 mm.
It was 61 cm, width 10.922 ctn (WRJ-2), and length 147.865 cm.
ターゲット２は、縦５． ６ ｃ ｒｎ、 ｔｊＪ８
ｃ ｔｎの大きざで、プラズマの流れの方向６に対し
て４５度に傾けた。基板３は、プラズマに直接ふれない
でプラズマの流れの方向６に対してほぼ平行に配置した
。磁場はコイル５によって発生させ、磁場密度ＢＯは、
ＥＣＲ条件を満たす０．０８７５Ｔとした。Target 2 is vertical 5. 6 crn, tjJ8
c tn and tilted at 45 degrees with respect to the plasma flow direction 6. The substrate 3 was placed approximately parallel to the plasma flow direction 6 without directly touching the plasma. The magnetic field is generated by the coil 5, and the magnetic field density BO is
It was set to 0.0875T, which satisfies the ECR conditions.
ターゲット２は、基板ホルダー１０に対して負電位にな
るようにした。ターゲット２は、ターゲット２の側方を
スパッタされないようにシールド７で被っている・
以上のように構成された本実施例のスパッタ装置を用い
て、以下酸化アルミニウム膜の形成について説明する。The target 2 was set to have a negative potential with respect to the substrate holder 10. The target 2 is covered with a shield 7 to prevent sputtering on the sides of the target 2. Formation of an aluminum oxide film will be described below using the sputtering apparatus of this embodiment configured as described above.
ターゲット２としてアルミニウムを用い、スパッタ
ガスとしてアルゴンガスと酸素ガスを用い、それぞれ５
ＳＣＣＭ流し、全圧力を０．２Ｐａとした。ターゲット
２に、電源４を接続して、基板ホルダー１０に対して−
１，０１（Ｖの直流電圧を印加した。マイクロ波電力は
、２００Ｗであった。この条件でターゲット２に流れる
電流は、１８０ｍＡで、電流密度は４ｍＡ／ｃｍ２であ
った。この電流密度の値は、従来例より２倍増加して、
ターゲットを傾けた効果を知ることができる。Using aluminum as target 2 and using argon gas and oxygen gas as sputtering gas, each
SCCM was flowed, and the total pressure was set to 0.2 Pa. Connect the power source 4 to the target 2 and connect it to the substrate holder 10.
A DC voltage of 1,01 (V) was applied. The microwave power was 200 W. Under these conditions, the current flowing through the target 2 was 180 mA, and the current density was 4 mA/cm2. The value of this current density is twice as large as the conventional example,
You can see the effect of tilting the target.
以上の条件で酸化アルミニウム膜が、毎分２５ｎｍの蒸
着速度で形成された。この酸化アルミニウム膜は、屈折
率１．７６、組成比Ａｌ：０＝２＝３の良質な膜であっ
た。これに対して、プラズマに直接ふれる位置でプラズ
マの流れの方向６に対して垂直の部分にも膜が堆積した
が、こちらの膜は、緻密さがなく、膜質も悪かった。こ
れより、基板３の配置の効果を知ることができる。Under the above conditions, an aluminum oxide film was formed at a deposition rate of 25 nm/min. This aluminum oxide film was a good quality film with a refractive index of 1.76 and a composition ratio of Al:0=2=3. On the other hand, a film was also deposited on a portion perpendicular to the plasma flow direction 6 at a position directly exposed to the plasma, but this film was not dense and had poor film quality. From this, the effect of the arrangement of the substrate 3 can be known.
なお、実施例においてコイル５によってＥＣＲ条件を満
たす磁場強度ＢＯであったが、磁場強度Ｂを１／３Ｂｏ
以上にしていればよい。 例えばＢ＝０．０６Ｔ （
＞１／３ＢＯ）で形成された酸化アルミニウム膜は、屈
折率Ｌ ７６、組成比Ａ１： Ｏ＝２： ３の良質な
膜であり、蒸着速度も毎分２０ｎｍと高速であった。ま
た磁場を発生させる手段としてコイル以外の永久磁石な
どを用いてもよく、磁場形式も磁場強度を１ ／ ３
Ｂ ｏ以上に達するものであればミラー形磁場、カスブ
形磁場。In addition, in the example, the magnetic field strength BO that satisfies the ECR condition was set by the coil 5, but the magnetic field strength B was set to 1/3 Bo.
The above should be enough. For example, B=0.06T (
The aluminum oxide film formed with the aluminum oxide film (>1/3BO) was a high quality film with a refractive index L of 76 and a composition ratio A1:O=2:3, and the deposition rate was as high as 20 nm/min. In addition, a permanent magnet other than a coil may be used as a means for generating a magnetic field, and the magnetic field format also reduces the magnetic field strength by 1/3.
If it reaches Bo or more, it is a mirror type magnetic field or a cusp type magnetic field.
発散磁場等のどの方式であってもよい。さらに磁場分布
においても、磁場強度Ｂに達する領域があればどの様な
分布でもよい。ターゲット２付近まで磁場が存在しても
よい。Any method such as a divergent magnetic field may be used. Further, the magnetic field distribution may be any distribution as long as there is a region that reaches the magnetic field strength B. The magnetic field may exist up to the vicinity of the target 2.
ターゲット２と基板３との配置は、実施例ではプラズマ
の流れの方向６に対して基板３を平行に、ターゲット２
を４５度に傾けているが、基板３をプラズマに直接ふれ
ない位置でプラズマの流れの方向６以外の位置であれば
どこに配置してもよい。In the embodiment, the target 2 and the substrate 3 are arranged such that the substrate 3 is parallel to the plasma flow direction 6, and the target 2 is placed parallel to the plasma flow direction 6.
Although the substrate 3 is tilted at an angle of 45 degrees, the substrate 3 may be placed at any position other than the plasma flow direction 6 and not in direct contact with the plasma.
ターゲット２とプラズマの流れの方向６との角度は、４
５度以外でもよく、流れの方向に対して傾いていればよ
い。The angle between the target 2 and the plasma flow direction 6 is 4
The angle may be other than 5 degrees, as long as it is inclined with respect to the flow direction.
実施例では、ターゲット２を一つ用いて装置を構成して
いるが、複数個のターゲットを配置してもよい。In the embodiment, the apparatus is configured using one target 2, but a plurality of targets may be arranged.
実施例では、電源４として直流電源を用い、ターゲット
２として金属または導電性材料を用いているが、直流電
源以外の交流電源や高周波電源を用いてもよく、ターゲ
ット２として酸化物、炭化物、窒化物等の化合物を用い
てもよい。例えばターゲットとして、酸化イツトリウム
、炭酸バリウム、酸化第−鋼等を用いて、複合酸化物薄
膜を形成することは、本発明に含まれる。In the embodiment, a DC power source is used as the power source 4, and a metal or a conductive material is used as the target 2. However, an AC power source or a high frequency power source other than the DC power source may be used, and the target 2 may be an oxide, a carbide, or a nitride. Compounds such as compounds may also be used. For example, the present invention includes forming a composite oxide thin film using yttrium oxide, barium carbonate, steel oxide, etc. as a target.
実施例では、スパッタガスとして、アルゴンガスと酸素
ガスを用いたが、アルゴンガス以外の不活性ガスであれ
ば何でもよく、また酸化物を形成する場合酸素ガス以外
の酸素を含むガスであれば何でもよく、酸化物以外の炭
化物や窒化物等の化合物を形成する場合窒素や炭素を含
むガスであればよい。In the examples, argon gas and oxygen gas were used as the sputtering gas, but any inert gas other than argon gas may be used.If an oxide is to be formed, any gas containing oxygen other than oxygen gas may be used. When forming compounds other than oxides such as carbides and nitrides, any gas containing nitrogen or carbon may be used.
実施例では、高周波としてマイクロ波を用いたが、マイ
クロ波以外の周波数領域を用いてもよい。In the embodiment, microwaves were used as the high frequency, but frequency ranges other than microwaves may be used.
例えば、１３．５６ＭＨｚの高周波と０．０−ＩＴの磁
場（ｆｏ＝１３．５６ＭＨｚのＥＣＲ条件の磁場ＢＯ＝
０．０００４ＢＴ）による装置を用いて薄膜を形成する
ことも本発明に含まれる。For example, a high frequency of 13.56 MHz and a magnetic field of 0.0-IT (magnetic field of ECR condition of fo = 13.56 MHz BO =
The present invention also includes forming a thin film using an apparatus according to 0.0004BT).
発明の詳細
な説明したように、本発明は真空槽内に高周波と磁場を
印加してプラズマを形成し、このプラズマの流れの方向
に対して傾けた少なくとも一つのターゲットを配置した
簡易な構成で、プラズマ中のイオンを多量にターゲット
に照射して、堆積速度を向上させる効果をもつ。また、
基板をプラズマに直接ふれない位置に配置することによ
り、良質な膜質を得ることが容易にできる効果をもつ。As described in detail, the present invention has a simple configuration in which plasma is formed by applying high frequency waves and a magnetic field in a vacuum chamber, and at least one target is arranged tilted with respect to the flow direction of the plasma. , which has the effect of increasing the deposition rate by irradiating the target with a large amount of ions in the plasma. Also,
By arranging the substrate in a position where it does not come into direct contact with the plasma, it is possible to easily obtain a good film quality.
さらに、高周波と磁場の関係をＥＣＲ条件を溝たすよう
にすると、高電離のプラズマを得て、さらに堆積速度を
向上させる効果をもつ。Furthermore, if the relationship between the radio frequency and the magnetic field is adjusted to meet the ECR conditions, highly ionized plasma can be obtained, which has the effect of further increasing the deposition rate.
以上のように本発明は優れた効果を有するものであり、
本発明の工業的価値は高い。As described above, the present invention has excellent effects,
The industrial value of the present invention is high.
第１図は本発明の一実施例のスパッタ装置概略図、第２
図は従来のスパッタ装置の概略図である。
１・・・真空槽、２・・・ターゲット、３・・・基板、
４・・・電源、５・・・コイル、６・・・プラズマの流
れの方向、１３・・・引出し窓。
代理人の氏名 弁理士 中尾敏男 はか１名第１図FIG. 1 is a schematic diagram of a sputtering apparatus according to an embodiment of the present invention, and FIG.
The figure is a schematic diagram of a conventional sputtering apparatus. 1... Vacuum chamber, 2... Target, 3... Substrate,
4... Power supply, 5... Coil, 6... Direction of plasma flow, 13... Drawer window. Name of agent: Patent attorney Toshio Nakao (1 person) Figure 1
Claims (4)
と前記磁場によってプラズマを形成し、前記プラズマの
流れの方向に対して傾けた少なくとも一つのターゲット
を配置したことを特徴とするスパッタ装置。(1) Sputtering characterized in that a high frequency wave and a magnetic field are applied in a vacuum chamber, a plasma is formed by the high frequency wave and the magnetic field, and at least one target is arranged tilted with respect to the flow direction of the plasma. Device.
を特徴とする特許請求の範囲第１項記載のスパッタ装置
。(2) The sputtering apparatus according to claim 1, characterized in that the substrate is placed in a position where it does not come into direct contact with the plasma.
の方向にほぼ平行に基板を配置したことを特徴とする特
許請求の範囲第１項記載のスパッタ装置。(3) The sputtering apparatus according to claim 1, characterized in that the substrate is arranged substantially parallel to the direction of plasma flow at a position that does not come into direct contact with the plasma.
波の周波数で決まる電子サイクロトロン共鳴条件をほぼ
満たす磁場を印加したことを特徴とする特許請求の範囲
第１項記載のスパッタ装置。(4) The sputtering apparatus according to claim 1, wherein a microwave is used as the high frequency, and a magnetic field that substantially satisfies an electron cyclotron resonance condition determined by the frequency of the microwave is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62307861A JPH01149958A (en) | 1987-12-04 | 1987-12-04 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62307861A JPH01149958A (en) | 1987-12-04 | 1987-12-04 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01149958A true JPH01149958A (en) | 1989-06-13 |
Family
ID=17974051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62307861A Pending JPH01149958A (en) | 1987-12-04 | 1987-12-04 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01149958A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230163410A (en) | 2021-03-31 | 2023-11-30 | 세키스이가가쿠 고교가부시키가이샤 | Branched-chain alkyl-modified silicone resin |
| KR20230163407A (en) | 2021-03-31 | 2023-11-30 | 세키스이가가쿠 고교가부시키가이샤 | Branched-chain alkyl-modified silicone resin |
-
1987
- 1987-12-04 JP JP62307861A patent/JPH01149958A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230163410A (en) | 2021-03-31 | 2023-11-30 | 세키스이가가쿠 고교가부시키가이샤 | Branched-chain alkyl-modified silicone resin |
| KR20230163407A (en) | 2021-03-31 | 2023-11-30 | 세키스이가가쿠 고교가부시키가이샤 | Branched-chain alkyl-modified silicone resin |
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