JPS6422027A - Plasma doping system - Google Patents

Plasma doping system

Info

Publication number
JPS6422027A
JPS6422027A JP17947887A JP17947887A JPS6422027A JP S6422027 A JPS6422027 A JP S6422027A JP 17947887 A JP17947887 A JP 17947887A JP 17947887 A JP17947887 A JP 17947887A JP S6422027 A JPS6422027 A JP S6422027A
Authority
JP
Japan
Prior art keywords
plasma
doping
sample
temperature
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17947887A
Other languages
Japanese (ja)
Inventor
Masabumi Kubota
Bunji Mizuno
Ichiro Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17947887A priority Critical patent/JPS6422027A/en
Publication of JPS6422027A publication Critical patent/JPS6422027A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the temperature rise of an unnecessary sample, and to obtain a plasma doping system enabling the doping with a high concentration impurity by a photo-resist mask by providing an introducing mechanism for a compound gas containing any of boron, phosphorus or arsenic, a plasma generating mechanism by high-frequency discharge and a sample-base rolling mechanism. CONSTITUTION:The pressure of the inside of a chamber 1 is controlled so as to be brought to approximately 10<-4>-10<-2> Torr by a conductance valve to an exhaust system connected to an exhaust port 3. Microwaves of several dozen-several hundred watts in 2.45GHz frequency are introduced, a magnetic field formed by a coil 9 and electrons in plasma generate a status close to electron cyclotron resonance, and high-density plasma is generated in spite of a high vacuum. Since a sample base 4A is separated from a plasma generating chamber by several dozen cm, the temperature of a wafer is hardly elevated due to energy except plasma contributing to doping, and deterioration due to the temperature of a photo-resist on the semiconductor wafer 6 is eliminated approximately.
JP17947887A 1987-07-17 1987-07-17 Plasma doping system Pending JPS6422027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17947887A JPS6422027A (en) 1987-07-17 1987-07-17 Plasma doping system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17947887A JPS6422027A (en) 1987-07-17 1987-07-17 Plasma doping system

Publications (1)

Publication Number Publication Date
JPS6422027A true JPS6422027A (en) 1989-01-25

Family

ID=16066545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17947887A Pending JPS6422027A (en) 1987-07-17 1987-07-17 Plasma doping system

Country Status (1)

Country Link
JP (1) JPS6422027A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0938529A (en) * 1995-08-01 1997-02-10 Eifu:Kk Static powder-coating device
US5725674A (en) * 1991-03-18 1998-03-10 Trustees Of Boston University Device and method for epitaxially growing gallium nitride layers
WO2003049142A1 (en) * 2001-12-04 2003-06-12 Varian Semiconductor Equipment Associates, Inc. Uniformity control for plasma doping systems

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5725674A (en) * 1991-03-18 1998-03-10 Trustees Of Boston University Device and method for epitaxially growing gallium nitride layers
JPH0938529A (en) * 1995-08-01 1997-02-10 Eifu:Kk Static powder-coating device
WO2003049142A1 (en) * 2001-12-04 2003-06-12 Varian Semiconductor Equipment Associates, Inc. Uniformity control for plasma doping systems

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