JPH01234397A - Method and apparatus for producing diamond-like thin film - Google Patents
Method and apparatus for producing diamond-like thin filmInfo
- Publication number
- JPH01234397A JPH01234397A JP5937788A JP5937788A JPH01234397A JP H01234397 A JPH01234397 A JP H01234397A JP 5937788 A JP5937788 A JP 5937788A JP 5937788 A JP5937788 A JP 5937788A JP H01234397 A JPH01234397 A JP H01234397A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- thin film
- vacuum
- gas
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 20
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 22
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 22
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 22
- 230000005284 excitation Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 27
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000010432 diamond Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 methane gas Chemical class 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明はダイヤモンド状薄膜の製造方法及び装置に関し
、さらに詳しくは、成膜能率の高いダイヤモンド状薄膜
の製造方法及び装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a method and apparatus for producing a diamond-like thin film, and more particularly to a method and apparatus for producing a diamond-like thin film with high deposition efficiency.
（従来技術）
従来からダイヤモンド、あるいはダイヤモンド状炭素薄
膜の製造には多くの方法が提案されているるか、充分に
結晶性の高い、すなわちダイヤモンド結晶に近い薄膜を
製造することは困難であった。これらの方法のうち、メ
タンガス等の低級炭化水素ガスをアーク放電その他のイ
オン化手段でイオン化してイオン流とし、この流れを電
界で加速して基板に差し向けることによりダイヤモンド
状薄膜を製膜する方法（イオン化蒸着法）は、製膜能率
の良いこと、製膜されたダイヤモンド状膜が良好な表面
性、高硬度、高熱伝導性、高屈折率を有し、仕上の表面
処理が不要となる等、優れた膜が得られる方法であるこ
とが知られている。(Prior art) Many methods have been proposed for producing diamond or diamond-like carbon thin films, or it has been difficult to produce thin films with sufficiently high crystallinity, that is, close to diamond crystals. . Among these methods, a method of forming a diamond-like thin film by ionizing lower hydrocarbon gas such as methane gas using arc discharge or other ionization means to form an ion flow, accelerating this flow using an electric field, and directing it toward the substrate. (Ionization vapor deposition method) has good film forming efficiency, the formed diamond-like film has good surface properties, high hardness, high thermal conductivity, and high refractive index, and there is no need for finishing surface treatment. It is known that this method yields excellent films.
（従来技術の欠点）
しかしながら、イオン化蒸着法等のイオン化に依存する
方法ではダイヤモンド状薄膜の成膜速度は通常的５μｍ
／ｈ程度であり、工業化するにはその向上が望まれてい
る。しかも、成膜厚さあたりの電力使用効率を向上させ
しかもダイヤセント膜の特性を変化させないで成膜速度
を向上できれば更に望ましい。(Disadvantages of conventional technology) However, in methods that rely on ionization such as ionized vapor deposition, the deposition rate of diamond-like thin films is typically 5 μm.
/h, and improvement is desired for industrialization. Moreover, it would be even more desirable if the power usage efficiency per film thickness could be improved and the film formation rate could be increased without changing the properties of the diamond film.
（発明の目的）
したがって、本発明の目的は、炭化水素原料を真空中に
導入し、イオン化し、これを基体上に指向させてダイヤ
モンド状薄膜を製造するに当たり、成膜速度を向上させ
ることを目的とする。(Object of the Invention) Therefore, the object of the present invention is to improve the film formation rate when producing a diamond-like thin film by introducing a hydrocarbon raw material into a vacuum, ionizing it, and directing it onto a substrate. purpose.
（発明の概要）
本発明の上記目的は、真空中に炭化水素ガスを導入し、
これをイオン化させ、基板上に析出させてダイヤモンド
状薄膜を形成させるに当たり、炭化水素ガスを真空中に
導入する前にプラズマ励起させることを特徴とする、ダ
イヤモンド状薄膜の製造方法及び装置によって達成され
る。(Summary of the invention) The above object of the present invention is to introduce a hydrocarbon gas into a vacuum,
This is achieved by a method and apparatus for producing a diamond-like thin film, which is characterized in that plasma is excited before introducing a hydrocarbon gas into a vacuum in order to ionize it and deposit it on a substrate to form a diamond-like thin film. Ru.
本発明によると、従来のイオン化蒸着法による成膜に比
して、大幅な成膜速度の向上を達成することができる。According to the present invention, it is possible to achieve a significant improvement in film formation rate compared to film formation by conventional ionized vapor deposition.
なお、本発明はその原理からイオン化蒸着法、熱フイラ
メント法、エレクトロンアシステツドＣＶＤ法等、その
他のイオン化を用いる方法にも有効である。Note that the present invention is also effective in other methods using ionization, such as ionized vapor deposition, thermal filament method, and electron assisted CVD method, based on its principle.
（発明の詳細な説明）
以下に本発明の詳細な説明する。 本発明の基本技術で
あるイオン化蒸着法は、特開昭５８−１７４５０７号公
報、特開昭５９−１７４５０８号等に記載されており、
本発明の実施例ではこれらの公報に記載された装置を基
本とした方法及び装置を用いる。しかし、炭化水素原料
のイオン化とその加速ができるなら他の方式のイオン化
蒸着技術を用いてもよい０例えば、グロー放電、マイク
ロ波、直流放電、熱分解、衝撃波等の手段により炭化水
素のイオン化を行なうなどの方法が可能である。(Detailed Description of the Invention) The present invention will be described in detail below. The ionization vapor deposition method, which is the basic technology of the present invention, is described in Japanese Patent Application Laid-open Nos. 174507-1987 and 174508-1980, etc.
Examples of the present invention use methods and devices based on the devices described in these publications. However, other ionization deposition techniques may be used as long as the hydrocarbon raw material can be ionized and accelerated. Methods such as doing this are possible.
本発明の実施に当たっては、上記公報に記載された方法
及び装置をそのまま利用することができる。同公報の装
置を用いる場合には、熱フィラメントによる熱電子放出
によって炭化水素ガスが分解されて出来るガスには多く
のイオン種、分解されないで残る中性分子や原子、ラジ
カル等が含まれている０例えば、通常用いられる原料で
あるメタンガスの場合には熱フィラメントによる熱電子
放出により形成されるイオンは主としてＣＨ，”、ＣＨ
３Ｉ であり、ほかに少量の、ＣＨ？、ＣＨ” 、Ｃ”
、Ｈ，” とイオン化されない種々の形態の反応種
すなわちラジカル、アニオン、炭化物、或は未反応物等
が含まれている。 これらの粒子が一緒に基板に衝突す
るとイオンは分解されて炭素のみが残り所定のダイヤモ
ンド構造を発達させる。この成膜法では、表面平滑度の
高いダイヤモンド状薄膜が得られる。In carrying out the present invention, the method and apparatus described in the above publication can be used as they are. When using the device described in the publication, the gas produced when hydrocarbon gas is decomposed by thermionic emission by a hot filament contains many ionic species, neutral molecules and atoms that remain undecomposed, and radicals. 0 For example, in the case of methane gas, which is a commonly used raw material, ions formed by thermionic emission by a hot filament are mainly CH, ", CH
3I and a small amount of CH? ,CH",C"
, H,'' and various forms of reactive species that are not ionized, such as radicals, anions, carbides, and unreacted substances. When these particles collide with the substrate together, the ions are decomposed and only carbon A predetermined diamond structure is developed in the remaining portion.This film formation method yields a diamond-like thin film with a high surface smoothness.
本発明の特徴を成す構成部分は、成膜用チャンバーに原
料炭化水素ガスを導入する前に、これをプラズマ励起す
る手段を用いることである。このようなプラズマ励起は
、炭化水素ガスをプラズマ励起室に導入し、所定のエネ
ルギーを加えることにより行なわれる。このようなプラ
ズマ励起手段としては従来から知られている任意の手段
、例えば、ＲＦ電力、マイクロ波等が利用できる。なお
、プラズマガスとしてはメタンガスのばか低分子量の炭
化水素、或はこれらの一種と酸素、窒素、アルゴン、ネ
オン、ヘリウムなどを用いることができる。A characteristic feature of the present invention is the use of means for plasma excitation of raw material hydrocarbon gas before introducing it into the film forming chamber. Such plasma excitation is performed by introducing hydrocarbon gas into a plasma excitation chamber and applying a predetermined amount of energy. Any conventionally known means such as RF power, microwaves, etc. can be used as such plasma excitation means. As the plasma gas, a low molecular weight hydrocarbon such as methane gas, or one of these, oxygen, nitrogen, argon, neon, helium, etc. can be used.
このように原料炭化水素を予めプラズマ励起することに
より、イオン化が容易になり、成膜効率が大幅に向上す
る。By plasma-exciting the raw material hydrocarbon in advance in this way, ionization becomes easy and the film-forming efficiency is greatly improved.
腹且芸１
第１図を参照するに、図中１０は真空容器、１１はチャ
ンバーであり、排気系１８に接続されて１０−’Ｔｏｒ
ｒ程度までの高真空に引かれる。1 Referring to FIG. 1, 10 is a vacuum container, 11 is a chamber, which is connected to an exhaust system 18 and has a 10-'Tor
It is drawn to a high vacuum of about r.
１２は基板Ｓを支持するための基板ホルダーであり、こ
の場合電圧Ｖａのグリッド１３がイオンの流れを基板Ｓ
へ向けて加速する。１４はフィラメントであり、交流電
源によって加熱されて熱電子を発生し、また負電位に維
持されている。１５は原料である炭化水素ガスの供給口
である。また、フィラメント１４を取囲んで対電ｔＭ１
６が配置され、フィラメントとの間に電圧Ｖｄを与える
。12 is a substrate holder for supporting the substrate S, and in this case, a grid 13 of voltage Va directs the flow of ions to the substrate S.
Accelerate towards. A filament 14 is heated by an AC power source to generate thermoelectrons, and is maintained at a negative potential. 15 is a supply port for hydrocarbon gas, which is a raw material. Further, a counter voltage tM1 is provided surrounding the filament 14.
6 is placed and applies a voltage Vd between it and the filament.
フィラメント１４、対電極１６及び供給口１５の周りを
取り囲んでイオン化ガスの閉じ込め用の磁界を発生する
電磁コイル１９が配置されている。An electromagnetic coil 19 is disposed surrounding the filament 14, the counter electrode 16, and the supply port 15 to generate a magnetic field for confining the ionized gas.
従ってＶｄ、Ｖａ及びコイルの電流を調製することによ
り膜質を変えることができる。なお、成膜基板が図示の
様な直線上にない場合にはイオンビームを適当な手段に
よって偏向させることも出来る。Therefore, the film quality can be changed by adjusting Vd, Va, and the coil current. Incidentally, when the film-forming substrate is not on a straight line as shown in the figure, the ion beam can also be deflected by appropriate means.
１ユノさ」ｂ慝久■
本発明の特徴に従って、プラズマ励起装置が炭化水素ガ
スの供給管に設けられる。第２図に示すように、ダイヤ
モンド状薄膜の成膜用真空容器１０の炭化水素供給口１
５への供給管１７にはプラズマ励起装置１６が設けられ
ている。この励起装置の駆動は公知の種々の手段を用い
ることができる。それらの若干の例を次ぎに示す。According to a feature of the invention, a plasma excitation device is provided in the hydrocarbon gas supply pipe. As shown in FIG. 2, a hydrocarbon supply port 1 of a vacuum vessel 10 for forming a diamond-like thin film is shown.
A plasma excitation device 16 is provided in the supply pipe 17 to the plasma generator 5 . Various known means can be used to drive this excitation device. Some examples of these are shown below.
第３図はマグネトロンを用いたプラズマ励起装置を示す
。発信器３０は例えば２．４５ＧＨｚのマイクロ波を生
じそれを導波管原料ガスに与えてプラズマ励起を行なう
、なお、３２も導波管でプランジャー３３の調整により
マツチングを行なう。FIG. 3 shows a plasma excitation device using a magnetron. The oscillator 30 generates a microwave of 2.45 GHz, for example, and applies it to the waveguide raw material gas to excite the plasma. Note that matching is also performed in the waveguide by adjusting the plunger 33.
第４図は他のプラズマ励起装置１６を示し、例えば石英
ガラス製供給管１７の周りにＲＦコイル３４を配しこれ
にＲＦ電源３６から１３゜５６ＭＨｚなどの高周波エネ
ルギーを加える。FIG. 4 shows another plasma excitation device 16, in which, for example, an RF coil 34 is arranged around a supply pipe 17 made of quartz glass, and high frequency energy such as 13° 56 MHz is applied to this from an RF power source 36.
別法として、第５図のように電極を設けて１３．５６Ｍ
ＨｚのＲＦ電力と直流電圧を加えても良い。Alternatively, as shown in Figure 5, electrodes can be provided and the 13.56M
Hz RF power and DC voltage may be applied.
そのほか電子線、放射線、紫外線照射等、プラズマ励起
が可能な手段ならどのような手段を用いても良い。In addition, any means that can excite plasma may be used, such as electron beams, radiation, and ultraviolet irradiation.
暖且方恭 上記第１図の装置によって製膜方法を詳しく説明する。Warm and courteous The film forming method using the apparatus shown in FIG. 1 will be explained in detail.
先ず、チャンバー１１内を１Ｏ−６Ｔｏｒｒまで高真空
とし、バルブ１９を操作して所定流量のメタンガスを導
入しながら排気系１８を調整して所定のガス圧例えば１
０伺Ｔｏｒｒとする。一方、フィラメント１４には交流
電流Ｉｆを流して加熱し、フィラメント１４とガス供給
口１５の間には電位差Ｖｄを印加して熱フィラメントに
よる熱電子放出を形成する。原料供給管１７に導入され
るメタンガス等の炭化水素ガスは先ずプラズマ励起装置
１６においてプラズマを形成する。次いで供給口１５か
ら成膜キャンバ−１１に供給されたされたメタンガスは
熱分解されるとともにフィラメントからの熱電子と衝突
してプラスのイオンと電子を生じる。この電子は別の熱
分解粒子と衝突する。このような現象を繰り返すことに
よりメタンガスは熱分解物質のプラスイオンと成る。First, the inside of the chamber 11 is made into a high vacuum down to 10-6 Torr, and the exhaust system 18 is adjusted while introducing a predetermined flow rate of methane gas by operating the valve 19 to reach a predetermined gas pressure, e.g.
Let it be 0 Torr. On the other hand, an alternating current If is passed through the filament 14 to heat it, and a potential difference Vd is applied between the filament 14 and the gas supply port 15 to form thermionic emission by the hot filament. Hydrocarbon gas such as methane gas introduced into the raw material supply pipe 17 first forms plasma in the plasma excitation device 16 . Next, the methane gas supplied from the supply port 15 to the film forming camber 11 is thermally decomposed and collides with thermionic electrons from the filament to generate positive ions and electrons. This electron collides with another pyrolysis particle. By repeating this phenomenon, methane gas becomes a positive ion of a thermally decomposed substance.
プラスイオンはグリッド１３に印加された負電位Ｖａに
より加速され基板Ｓに向けて加速される。なお、各部の
電位、電流、温度等の条件については先に引用した特許
公報のばか公知の資料を参照されたい。The positive ions are accelerated by the negative potential Va applied to the grid 13 and are accelerated toward the substrate S. For conditions such as potential, current, temperature, etc. of each part, please refer to the Baka-Known materials in the patent publication cited above.
なお、プラズマガスとしてはメタンガスのばか低分子量
の炭化水素、或はこれらの一種と酸素、窒素、アルゴン
、ネオン、ヘリウムなどを用いることができる。As the plasma gas, a low molecular weight hydrocarbon such as methane gas, or one of these, oxygen, nitrogen, argon, neon, helium, etc. can be used.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
火急Ｌ
プラズマ励起装置として、第２図、及び第３図に示され
た装置をそれぞれ用い、メタンガスの供給流量３０３
ＣＣＭ、圧力を１０−’Ｔｏｒｒとして励起装置１６に
導入してプラズマを形成させた。一方成膜チャンバー側
では、基板に直径３０ｍｍのシリコンエーハを用い、真
空容器ｌＯ内を１０−’Ｔｏｒｒに排気してから上記の
したメタンガスを導入しガス圧を１０−’Ｔｏｒｒとし
て熱フィラメントによる熱電子放出を起こさせた。電磁
コイル１９の磁束密度は４００ガウス、基板電圧−３０
０Ｖ、基板温度２００”Ｃとした。Kakyu L As a plasma excitation device, the devices shown in FIG. 2 and FIG. 3 are used, and the supply flow rate 303 of methane gas is
CCM was introduced into the excitation device 16 at a pressure of 10-' Torr to form a plasma. On the other hand, on the film-forming chamber side, a silicon wafer with a diameter of 30 mm was used as the substrate, and the inside of the vacuum chamber 1O was evacuated to 10-' Torr, and then the above-mentioned methane gas was introduced, and the gas pressure was set to 10-' Torr, and heat was generated by a hot filament. caused electron emission. The magnetic flux density of the electromagnetic coil 19 is 400 Gauss, and the substrate voltage is -30
The voltage was 0V and the substrate temperature was 200''C.
またフィラメント１４には電流２５Ａを流した。Further, a current of 25 A was applied to the filament 14.
膜圧が３μｍの膜を生成させた。A membrane with a membrane thickness of 3 μm was produced.
嵐校１
プラズマ励起装置を用いなかったほかは、実施例と同一
の装置長ｑ条件を用いて３μｍの薄膜を製膜した。Arashi School 1 A thin film of 3 μm was formed using the same device length q conditions as in the example except that the plasma excitation device was not used.
上記実施例及び比較例により得られたダイヤモンド状薄
膜の成膜速度を測定した。The deposition rate of the diamond-like thin films obtained in the above Examples and Comparative Examples was measured.
測定結果を次表に示す。The measurement results are shown in the table below.
（作用効果）
以上のように、本発明によれば、成膜速度が従来の方法
に比べて約９％以上、条件によっては１７％以上も向上
することが分かった０本発明によると電力の大幅な節約
が達成できる。(Operation and Effect) As described above, according to the present invention, it was found that the film formation speed was improved by about 9% or more compared to the conventional method, and depending on the conditions, it was found that the film formation rate was improved by more than 17%. Significant savings can be achieved.
第１図はダイヤモンド成膜装置の１例を示す断面図、第
２図は本発明のプラズマ励起装置の該略図、第３図ない
し第５図は本発明のプラズマ励起装置の一例を示す該略
図である。
区
区
吸 派
手続補正帯
平成元年１月２３日
特許庁長官 吉 １）文 毅 殿
事件の表示 昭和６３年特許願第５９３７７号発明の名
称 ダイヤモンド状薄膜の製造方法及び装置補正をす
る者FIG. 1 is a sectional view showing an example of a diamond film forming apparatus, FIG. 2 is a schematic diagram of a plasma excitation device of the present invention, and FIGS. 3 to 5 are schematic diagrams showing an example of a plasma excitation device of the present invention. It is. Ku-ku Shu-ha Proceedings Amendment Band January 23, 1989 Commissioner of the Japan Patent Office Yoshi 1) Indication of the case of Takeshi Moon 1988 Patent Application No. 59377 Title of the invention Person who amends the method and apparatus for manufacturing a diamond-like thin film
Claims (2)
させ、基板上に析出させてダイヤモンド状薄膜を形成さ
せる方法において、炭化水素ガスを真空中に導入する前
にプラズマ励起装置に通すことを特徴とする、ダイヤモ
ンド状薄膜の製造方法。(1) In a method of introducing hydrocarbon gas into a vacuum, ionizing it, and depositing it on a substrate to form a diamond-like thin film, the hydrocarbon gas is passed through a plasma excitation device before being introduced into the vacuum. A method for producing a diamond-like thin film, characterized by:
させ、基板上に析出させてダイヤモンド状薄膜を形成さ
せる装置において、炭化水素を導入する通路にプラズマ
励起手段を配置したことを特徴とする、ダイヤモンド状
薄膜の製造装置。(2) An apparatus for introducing hydrocarbon gas into a vacuum, ionizing it, and depositing it on a substrate to form a diamond-like thin film, characterized in that a plasma excitation means is disposed in the passage through which the hydrocarbon is introduced. A device for producing diamond-like thin films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5937788A JP2687129B2 (en) | 1988-03-15 | 1988-03-15 | Method and apparatus for producing diamond-like thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5937788A JP2687129B2 (en) | 1988-03-15 | 1988-03-15 | Method and apparatus for producing diamond-like thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01234397A true JPH01234397A (en) | 1989-09-19 |
| JP2687129B2 JP2687129B2 (en) | 1997-12-08 |
Family
ID=13111530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5937788A Expired - Lifetime JP2687129B2 (en) | 1988-03-15 | 1988-03-15 | Method and apparatus for producing diamond-like thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2687129B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5112025A (en) * | 1990-02-22 | 1992-05-12 | Tdk Corporation | Molds having wear resistant release coatings |
| US5169452A (en) * | 1990-05-14 | 1992-12-08 | Tdk Corporation | Apparatus for the synthesis of diamond-like thin films |
| US5185067A (en) * | 1989-07-10 | 1993-02-09 | Tdk Corporation | Process for manufacturing diamond-like thin film |
| JPH07305173A (en) * | 1994-03-17 | 1995-11-21 | Shin Etsu Chem Co Ltd | Production of body having superhard carbon film and device therefor |
| US5662877A (en) * | 1989-08-23 | 1997-09-02 | Tdk Corporation | Process for forming diamond-like thin film |
-
1988
- 1988-03-15 JP JP5937788A patent/JP2687129B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5185067A (en) * | 1989-07-10 | 1993-02-09 | Tdk Corporation | Process for manufacturing diamond-like thin film |
| US5662877A (en) * | 1989-08-23 | 1997-09-02 | Tdk Corporation | Process for forming diamond-like thin film |
| US5112025A (en) * | 1990-02-22 | 1992-05-12 | Tdk Corporation | Molds having wear resistant release coatings |
| US5169452A (en) * | 1990-05-14 | 1992-12-08 | Tdk Corporation | Apparatus for the synthesis of diamond-like thin films |
| JPH07305173A (en) * | 1994-03-17 | 1995-11-21 | Shin Etsu Chem Co Ltd | Production of body having superhard carbon film and device therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2687129B2 (en) | 1997-12-08 |
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