JPS5669834A - Method for etching - Google Patents

Method for etching

Info

Publication number
JPS5669834A
JPS5669834A JP14607279A JP14607279A JPS5669834A JP S5669834 A JPS5669834 A JP S5669834A JP 14607279 A JP14607279 A JP 14607279A JP 14607279 A JP14607279 A JP 14607279A JP S5669834 A JPS5669834 A JP S5669834A
Authority
JP
Japan
Prior art keywords
etching
film
wafer
pattern
luminence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14607279A
Other languages
Japanese (ja)
Inventor
Shigeru Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14607279A priority Critical patent/JPS5669834A/en
Publication of JPS5669834A publication Critical patent/JPS5669834A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To simply identify the exposure of the groundwork, in the case etching is performed on the film deposited on an Si substrate by the plasma of carbon and flourine, by identifying the end of etching with the beginning of the luminence of the etching surface. CONSTITUTION:A pattern of an SiO2 film is formed on an Si wafer 1. An Si3N4 film 3 which is to be etched is grown on all the surface including said pattern in a gaseous phase. Then, the mask of a resist film 4 is provided on the wafer 1, and the product is placed in a reaction chamber. A specified pattern is obtained on the film 3 by plasma etching using a mixture of CF4 gas and N2 gas containing carbon and flourine. In this case, the reacting tube is made of quartz. The etching is observed in the dark room. The end of the etching is observed by the beginning of the luminence of a blue color on the exposed surface of the wafer 1. In this method, the end of the etching can be very simply identified, the side etching is decreased, and the damage of the groundwork can be reduced.
JP14607279A 1979-11-13 1979-11-13 Method for etching Pending JPS5669834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14607279A JPS5669834A (en) 1979-11-13 1979-11-13 Method for etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14607279A JPS5669834A (en) 1979-11-13 1979-11-13 Method for etching

Publications (1)

Publication Number Publication Date
JPS5669834A true JPS5669834A (en) 1981-06-11

Family

ID=15399453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14607279A Pending JPS5669834A (en) 1979-11-13 1979-11-13 Method for etching

Country Status (1)

Country Link
JP (1) JPS5669834A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633361U (en) * 1992-09-30 1994-04-28 日本航空電子工業株式会社 connector
US5338415A (en) * 1992-06-22 1994-08-16 The Regents Of The University Of California Method for detection of chemicals by reversible quenching of silicon photoluminescence

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338415A (en) * 1992-06-22 1994-08-16 The Regents Of The University Of California Method for detection of chemicals by reversible quenching of silicon photoluminescence
JPH0633361U (en) * 1992-09-30 1994-04-28 日本航空電子工業株式会社 connector

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